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- Title
Infrared spectroscopy of nano-porous silicon.
- Authors
Prokhorov, A. S.; Zhukova, E. S.; Spektor, I. E.; Karavansky, V. A.; Gorshunov, B. P.
- Abstract
The first measurements of dielectric-permittivity and conductivity spectra of several samples of nano-porous silicon prepared by anodization of low-resistance monocrystalline silicon are performed at room temperature by means of subterahertz and IR spectroscopy in the frequency range 7–4000 cm−1. The obtained spectra are analyzed in terms of the effective-medium theory with a size-dependent dielectric-response function of nanoinclusions and average dielectric parameters of the surronding medium. It is found that the dielectric properties of the inclusions are dependent on nano-size effects such as charge-carrier scattering at the boundaries of the nanocrystallites and increase in the band-gap energy due to the quantum size effect. The geometric and dielectric characteristics of silicon nano-size inclusions are determined. We consider the mechanisms of variation in the wide-band dielectric permittivity and conductivity spectra of monocrystalline silicon during transformation of its structure from monocrystalline to nano-porous.
- Subjects
DIELECTRIC devices; SPECTRUM analysis; POROUS silicon; DIELECTRICS; ELECTRIC conductivity
- Publication
Radiophysics & Quantum Electronics, 2007, Vol 50, Issue 10/11, p823
- ISSN
0033-8443
- Publication type
Article
- DOI
10.1007/s11141-007-0073-1