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- Title
Phonon–Plasmon Interaction in Tunneling GaAs/AlAs Superlattices.
- Authors
Volodin, V. A.; Efremov, M. D.; Preobrazhenskiı, V. V.; Semyagin, B. R.; Bolotov, V. V.; Sachkov, V. A.; Galaktionov, E. A.; Kretinin, A. V.
- Abstract
The phonon–plasmon interaction in tunneling GaAs[sub n]/AlAs[sub m] superlattices (m = 5 and 6≥n≥0.6 monolayers) was studied by Raman scattering spectroscopy. The interaction of optical phonons localized in GaAs and AlAs layers with quasi-three-dimensional plasmons strengthens as the thickness of GaAs quantum wells decreases and the electronic states in the superlattices become delocalized due to tunneling. It is assumed that the plasmons also interact with the TO-like phonon modes localized in quantum islands or in thin ruffled layers. © 2000 MAIK “Nauka / Interperiodica”.
- Subjects
PHONONS; PLASMONS (Physics); SUPERLATTICES; RAMAN effect
- Publication
JETP Letters, 2000, Vol 71, Issue 11, p477
- ISSN
0021-3640
- Publication type
Article
- DOI
10.1134/1.1307997