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On the Critical Exponents of Certain Nonlinear Boundary-Value Problems with Biharmonic Operator in the Exterior of a Ball.
Published in:
Mathematical Notes, 2006, v. 79, n. 1/2, p. 185, doi. 10.1007/s11006-006-0022-x
By:
- Volodin, Yu. V.
Publication type:
Article
Chemical Vapor Deposition of Silicon Nanoparticles on the Surface of Multiwalled Carbon Nanotubes.
Published in:
Journal of Structural Chemistry, 2020, v. 61, n. 4, p. 617, doi. 10.1134/S0022476620040162
By:
- Zavorin, A. V.;
- Kuznetsov, V. L.;
- Moseenkov, S. I.;
- Tsendsuren, Tsog-Ochir;
- Volodin, V. A.;
- Galkin, P. S.;
- Ishchenko, A. V.
Publication type:
Article
Study of Behavioral Parameters during Learning of Rats in an Operant Feeding Task and Evaluation of Biochemical Indexes after Dietary Consumption of the Phytoecdysteroid Extract.
Published in:
Bulletin of Experimental Biology & Medicine, 2014, v. 158, n. 1, p. 4, doi. 10.1007/s10517-014-2678-7
By:
- Murtazina, E.;
- Sidorova, Yu.;
- Zhuravlev, B.;
- Mazo, V.;
- Zorin, S.;
- Volodin, V.
Publication type:
Article
Real Structures of Doped Lead Telluride Crystals.
Published in:
Crystallography Reports, 2002, v. 47, n. 7, p. S128, doi. 10.1134/1.1529967
By:
- Zlomanov, V. P.;
- Kuznetsova, T. A.;
- Dorofeev, S. G.;
- Volodin, V. D.;
- Tananaeva, O. I.
Publication type:
Article
Synthesis and Study of Bismuth(III) Oxalates Precipitated from Mineral Acid Solutions.
Published in:
Russian Journal of General Chemistry, 2023, v. 93, n. 9, p. 2295, doi. 10.1134/S1070363223090116
By:
- Timakova, E. V.;
- Timakova, T. E.;
- Afonina, L. I.;
- Bulina, N. V.;
- Titkov, A. I.;
- Gerasimov, K. B.;
- Volodin, V. A.;
- Yukhin, Y. M.
Publication type:
Article
De Novo Transcriptome Profiling of Brain Tissue from the Annual Killifish Nothobranchius guentheri.
Published in:
Life (2075-1729), 2021, v. 11, n. 2, p. 137, doi. 10.3390/life11020137
By:
- Guvatova, Zulfiia G.;
- Fedorova, Maria S.;
- Vershinina, Yulia S.;
- Pudova, Elena A.;
- Lipatova, Anastasiya V.;
- Volodin, Vsevolod V.;
- Gladysh, Natalya S.;
- Tokarev, Artemiy T.;
- Kornev, Alexey B.;
- Pavlov, Vladislav S.;
- Bakhtogarimov, Ildar R.;
- Krysanov, Evgeny Y.;
- Moskalev, Alexey A.;
- Krasnov, George S.;
- Kudryavtseva, Anna V.
Publication type:
Article
Aluminum-induced crystallization of silicon suboxide thin films.
Published in:
Applied Physics A: Materials Science & Processing, 2018, v. 124, n. 9, p. 1, doi. 10.1007/s00339-018-2070-y
By:
- Zamchiy, A. O.;
- Baranov, E. A.;
- Khmel, S. Ya.;
- Volodin, V. A.;
- Vdovin, V. I.;
- Gutakovskii, A. K.
Publication type:
Article
Raman scattering spectroscopy of inclusions of carbon in AlO films and its solid solutions with HfO.
Published in:
Optics & Spectroscopy, 2011, v. 110, n. 1, p. 55, doi. 10.1134/S0030400X11010188
By:
- Smirnova, T.;
- Volodin, V.;
- Lebedev, M.;
- Belyi, V.
Publication type:
Article
Ellipsometry of GeO2 films with Ge nanoclusters: Influence of the quantum-size effect on refractive index.
Published in:
Optics & Spectroscopy, 2009, v. 106, n. 3, p. 436, doi. 10.1134/S0030400X09030205
By:
- Marin, D.;
- Gorokhov, E.;
- Borisov, A.;
- Volodin, V.
Publication type:
Article
Growth of Silicene by Molecular Beam Epitaxy on CaF2/Si(111) Substrates Modified by Electron Irradiation.
Published in:
JETP Letters, 2024, v. 119, n. 9, p. 703, doi. 10.1134/S0021364024600599
By:
- Zinovieva, A. F.;
- Zinovyev, V. A.;
- Katsyuba, A. V.;
- Volodin, V. A.;
- Muratov, V. I.;
- Dvurechenskii, A. V.
Publication type:
Article
Synthesis of Epitaxial Structures with Two-Dimensional Si Layers Embedded in a CaF2 Dielectric Matrix.
Published in:
JETP Letters, 2022, v. 116, n. 9, p. 628, doi. 10.1134/S0021364022602159
By:
- Zinovyev, V. A.;
- Zinovieva, A. F.;
- Volodin, V. A.;
- Gutakovskii, A. K.;
- Deryabin, A. S.;
- Krupin, A. Yu.;
- Kulik, L. V.;
- Zhivulko, V. D.;
- Mudryi, A. V.;
- Dvurechenskii, A. V.
Publication type:
Article
Culturable Bacterial Endophytes of Wild White Poplar (Populus alba L.) Roots: A First Insight into Their Plant Growth-Stimulating and Bioaugmentation Potential.
Published in:
Biology (2079-7737), 2023, v. 12, n. 12, p. 1519, doi. 10.3390/biology12121519
By:
- Gladysh, Natalya S.;
- Bogdanova, Alina S.;
- Kovalev, Maxim A.;
- Krasnov, George S.;
- Volodin, Vsevolod V.;
- Shuvalova, Anastasia I.;
- Ivanov, Nikita V.;
- Popchenko, Mikhail I.;
- Samoilova, Aleksandra D.;
- Polyakova, Aleksandra N.;
- Dmitriev, Alexey A.;
- Melnikova, Nataliya V.;
- Karpov, Dmitry S.;
- Bolsheva, Nadezhda L.;
- Fedorova, Maria S.;
- Kudryavtseva, Anna V.
Publication type:
Article
Diffusion of Germanium from a Buried SiO2 Layer and Formation of a SiGe Phase.
Published in:
Semiconductors, 2022, v. 56, n. 3, p. 215, doi. 10.1134/S1063782622020154
By:
- Tyschenko, I. E.;
- Khmelnitsky, R. A.;
- Saraykin, V. V.;
- Volodin, V. A.;
- Popov, V. P.
Publication type:
Article
Atomic Structure and Optical Properties of CaSi2 Layers Grown on CaF2/Si Substrates.
Published in:
Semiconductors, 2021, v. 55, n. 10, p. 808, doi. 10.1134/S1063782621090268
By:
- Zinovyev, V. A.;
- Kacyuba, A. V.;
- Volodin, V. A.;
- Zinovieva, A. F.;
- Cherkova, S. G.;
- Smagina, Zh. V.;
- Dvurechenskii, A. V.;
- Krupin, A. Y.;
- Borodavchenko, O. M.;
- Zhivulko, V. D.;
- Mudryi, A. V.
Publication type:
Article
Structure of Germanium Monoxide Thin Films.
Published in:
Semiconductors, 2020, v. 54, n. 12, p. 1555, doi. 10.1134/S1063782620120027
By:
- Astankova, K. N.;
- Volodin, V. A.;
- Azarov, I. A.
Publication type:
Article
Effect of Interfaces and Thickness on the Crystallization Kinetics of Amorphous Germanium Films.
Published in:
Semiconductors, 2020, v. 54, n. 7, p. 754, doi. 10.1134/S1063782620070040
By:
- Krivyakin, G. K.;
- Volodin, V. A.;
- Kamaev, G. N.;
- Popov, A. A.
Publication type:
Article
On the Formation of Amorphous Ge Nanoclusters and Ge Nanocrystals in GeSixOy Films on Quartz Substrates by Furnace and Pulsed Laser Annealing.
Published in:
Semiconductors, 2020, v. 54, n. 3, p. 322, doi. 10.1134/S1063782620030070
By:
- Zhang Fan;
- Kochubey, S. A.;
- Stoffel, M.;
- Rinnert, H.;
- Vergnat, M.;
- Volodin, V. A.
Publication type:
Article
Study of Structural Modification of Composites with Ge Nanoclusters by Optical and Electron Microscopy Methods.
Published in:
Semiconductors, 2019, v. 53, n. 16, p. 2064, doi. 10.1134/S1063782619120030
By:
- Astankova, K. N.;
- Gorokhov, E. B.;
- Azarov, I. A.;
- Volodin, V. A.;
- Latyshev, A. V.
Publication type:
Article
Luminescence Properties of FZ Silicon Irradiated with Swift Heavy Ions.
Published in:
Semiconductors, 2019, v. 53, n. 11, p. 1427, doi. 10.1134/S1063782619110046
By:
- Cherkova, S. G.;
- Skuratov, V. A.;
- Volodin, V. A.
Publication type:
Article
Some Physical Properties of the New Intermetallic Compound NbCd2.
Published in:
Semiconductors, 2019, v. 53, n. 8, p. 1028, doi. 10.1134/S1063782619080219
By:
- Volodin, V. N.;
- Tuleushev, Y. Zh.;
- Zhakanbaev, E. A.;
- Migunova, A. A.;
- Nicenko, A. B.
Publication type:
Article
Raman Scattering in InSb Spherical Nanocrystals Ion-Synthesized in Silicon-Oxide Films.
Published in:
Semiconductors, 2019, v. 53, n. 4, p. 493, doi. 10.1134/S1063782619040262
By:
- Tyschenko, I. E.;
- Volodin, V. A.;
- Popov, V. P.
Publication type:
Article
Crystallization of Amorphous Germanium Films and Multilayer a-Ge/a-Si Structures upon Exposure to Nanosecond Laser Radiation.
Published in:
Semiconductors, 2019, v. 53, n. 3, p. 400, doi. 10.1134/S1063782619030217
By:
- Volodin, V. A.;
- Krivyakin, G. K.;
- Ivlev, G. D.;
- Prokopyev, S. L.;
- Gusakova, S. V.;
- Popov, A. A.
Publication type:
Article
On the Formation of IR-Light-Emitting Ge Nanocrystals in Ge:SiO2 Films.
Published in:
Semiconductors, 2018, v. 52, n. 9, p. 1178, doi. 10.1134/S1063782618090233
By:
- Volodin, V. A.;
- Rui, Zhang;
- Krivyakin, G. K.;
- Antonenko, A. Kh.;
- Stoffel, M.;
- Rinnert, H.;
- Vergnat, M.
Publication type:
Article
Forbidden Resonant Raman Scattering in GaAs/AlAs Superlattices: Experiment and Calculations.
Published in:
Semiconductors, 2018, v. 52, n. 6, p. 717, doi. 10.1134/S1063782618060234
By:
- Volodin, V. A.;
- Sachkov, V. A.;
- Sinyukov, M. P.
Publication type:
Article
New Method of Porous Ge Layer Fabrication: Structure and Optical Properties.
Published in:
Semiconductors, 2018, v. 52, n. 5, p. 628, doi. 10.1134/S1063782618050111
By:
- Gorokhov, E. B.;
- Astankova, K. N.;
- Azarov, I. A.;
- Volodin, V. A.;
- Latyshev, A. V.
Publication type:
Article
Ion-Beam Synthesis of the Crystalline Ge Phase in SiON Films upon Annealing under High Pressure.
Published in:
Semiconductors, 2018, v. 52, n. 2, p. 268, doi. 10.1134/S1063782618020215
By:
- Tyschenko, I.;
- Krivyakin, G.;
- Volodin, V.
Publication type:
Article
Formation and study of p-i-n structures based on two-phase hydrogenated silicon with a germanium layer in the i-type region.
Published in:
Semiconductors, 2017, v. 51, n. 10, p. 1370, doi. 10.1134/S1063782617100128
By:
- Krivyakin, G.;
- Volodin, V.;
- Shklyaev, A.;
- Mortet, V.;
- More-Chevalier, J.;
- Ashcheulov, P.;
- Remes, Z.;
- Stuchliková, T.;
- Stuchlik, J.
Publication type:
Article
Specific features of the ion-beam synthesis of Ge nanocrystals in SiO thin films.
Published in:
Semiconductors, 2017, v. 51, n. 9, p. 1240, doi. 10.1134/S1063782617090226
By:
- Tyschenko, I.;
- Cherkov, A.;
- Volodin, V.;
- Voelskow, M.
Publication type:
Article
Optical properties of p-i-n structures based on amorphous hydrogenated silicon with silicon nanocrystals formed via nanosecond laser annealing.
Published in:
Semiconductors, 2016, v. 50, n. 7, p. 935, doi. 10.1134/S1063782616070101
By:
- Krivyakin, G.;
- Volodin, V.;
- Kochubei, S.;
- Kamaev, G.;
- Purkrt, A.;
- Remes, Z.;
- Fajgar, R.;
- Stuchliková, T.;
- Stuchlik, J.
Publication type:
Article
Effect of hydrostatic pressure during the annealing of silicon-on-insulator films implanted with a high hydrogen-ion dose.
Published in:
Semiconductors, 2014, v. 48, n. 10, p. 1303, doi. 10.1134/S1063782614100285
By:
- Tyschenko, I.;
- Volodin, V.;
- Kozlovski, V.;
- Popov, V.
Publication type:
Article
Comparison of various methods for transferring graphene and few layer graphene grown by chemical vapor deposition to an insulating SiO/Si substrate.
Published in:
Semiconductors, 2014, v. 48, n. 6, p. 804, doi. 10.1134/S1063782614060049
By:
- Antonova, I.;
- Golod, S.;
- Soots, R.;
- Komonov, A.;
- Seleznev, V.;
- Sergeev, M.;
- Volodin, V.;
- Prinz, V.
Publication type:
Article
Raman scattering in PbTe and PbSnTe films: In situ phase transformations.
Published in:
Semiconductors, 2014, v. 48, n. 2, p. 173, doi. 10.1134/S1063782614020298
By:
- Volodin, V.;
- Sinyukov, M.;
- Shcheglov, D.;
- Latyshev, A.;
- Fedosenko, E.
Publication type:
Article
Crystallization induced by thermal annealing with millisecond pulses in silicon-on-insulator films implanted with high doses of hydrogen ions.
Published in:
Semiconductors, 2013, v. 47, n. 5, p. 606, doi. 10.1134/S1063782613050229
By:
- Tyschenko, I.;
- Volodin, V.;
- Voelskow, M.;
- Cherkov, A.;
- Popov, V.
Publication type:
Article
Influence of irradiation with swift heavy ions on multilayer Si/SiO heterostructures.
Published in:
Semiconductors, 2013, v. 47, n. 3, p. 358, doi. 10.1134/S1063782613030111
By:
- Kachurin, G.;
- Cherkova, S.;
- Marin, D.;
- Volodin, V.;
- Cherkov, A.;
- Antonenko, A.;
- Kamaev, G.;
- Skuratov, V.
Publication type:
Article
Quantum-confinement effect in silicon-on-insulator films implanted with high doses of hydrogen ions.
Published in:
Semiconductors, 2012, v. 46, n. 10, p. 1286, doi. 10.1134/S1063782612100181
By:
- Tyschenko, I.;
- Volodin, V.
Publication type:
Article
Formation of light-emitting nanostructures in layers of stoichiometric SiO irradiated with swift heavy ions.
Published in:
Semiconductors, 2011, v. 45, n. 10, p. 1311, doi. 10.1134/S1063782611100113
By:
- Kachurin, G.;
- Cherkova, S.;
- Skuratov, V.;
- Marin, D.;
- Kesler, V.;
- Volodin, V.
Publication type:
Article
Crystallization of hydrogenated amorphous silicon films by exposure to femtosecond pulsed laser radiation.
Published in:
Semiconductors, 2011, v. 45, n. 2, p. 265, doi. 10.1134/S1063782611020254
By:
- Volodin, V.;
- Kachko, A.
Publication type:
Article
Formation and crystallization of silicon nanoclusters in SiN:H films using femtosecond pulsed laser annealings.
Published in:
Semiconductors, 2010, v. 44, n. 12, p. 1611, doi. 10.1134/S1063782610120146
By:
- Korchagina, T.;
- Volodin, V.;
- Chichkov, B.
Publication type:
Article
X-ray and infrared spectroscopy of layers produced by cosputtering of spatially separated SiO2 and Si sources.
Published in:
Semiconductors, 2010, v. 44, n. 4, p. 531, doi. 10.1134/S1063782610040214
By:
- Shamin, S. N.;
- Galakhov, V. R.;
- Aksenova, V. I.;
- Karpov, A. N.;
- Shvartz, N. L.;
- Yanovitskaya, Z. Sh.;
- Volodin, V. A.;
- Antonova, I. V.;
- Ezhevskaya, T. B.;
- Jedrzejewski, J.;
- Savir, E.;
- Balberg, I.
Publication type:
Article
Structure and optical properties of SiN x: H films with Si nanoclusters produced by low-frequency plasma-enhanced chemical vapor deposition.
Published in:
Semiconductors, 2009, v. 43, n. 11, p. 1514, doi. 10.1134/S1063782609110207
By:
- Korchagina, T. T.;
- Marin, D. V.;
- Volodin, V. A.;
- Popov, A. A.;
- Vergnat, M.
Publication type:
Article
Effect of the ion-energy loss rate on defect formation during implantation in silicon nanocrystals.
Published in:
Semiconductors, 2008, v. 42, n. 9, p. 1127, doi. 10.1134/S1063782608090224
By:
- Kachurin, G. A.;
- Cherkova, S. G.;
- Marin, D. V.;
- Gutakovskiǐ, A. K.;
- Cherkov, A. G.;
- Volodin, V. A.
Publication type:
Article
SiO x layer formation during plasma sputtering of Si and SiO2 targets.
Published in:
Semiconductors, 2008, v. 42, n. 6, p. 731, doi. 10.1134/S106378260806016X
By:
- Karpov, A. N.;
- Marin, D. V.;
- Volodin, V. A.;
- Jedrzejewski, J.;
- Kachurin, G. A.;
- Savir, E.;
- Shwartz, N. L.;
- Yanovitskaya, Z. Sh.;
- Balberg, I.;
- Goldstein, Y.
Publication type:
Article
Effect of high-power nanosecond and femtosecond laser pulses on silicon nanostructures.
Published in:
Semiconductors, 2008, v. 42, n. 2, p. 183, doi. 10.1134/S1063782608020103
By:
- Kachurin, G.;
- Cherkova, S.;
- Volodin, V.;
- Marin, D.;
- Deutschmann, M.
Publication type:
Article
Variation in optical-absorption edge in SiN x layers with silicon clusters.
Published in:
Semiconductors, 2008, v. 42, n. 2, p. 202, doi. 10.1134/S1063782608020152
By:
- Efremov, M.;
- Volodin, V.;
- Marin, D.;
- Arzhannikova, S.;
- Kamaev, G.;
- Kochubeĭ, S.;
- Popov, A.
Publication type:
Article
Determination of the composition and strains in GexSi1− x -based nanostructures from Raman spectroscopy data with consideration of the contribution of the heterointerface.
Published in:
Semiconductors, 2007, v. 41, n. 8, p. 930, doi. 10.1134/S106378260708012X
By:
- Volodin, V. A.;
- Efremov, M. D.;
- Yakimov, A. I.;
- Mikhalev, G. Yu.;
- Nikiforov, A. I.;
- Dvurechenskiĭ, A. V.
Publication type:
Article
Determination of the composition and stresses in GexSi(1− x) heterostructures from Raman spectroscopy data: Refinement of model parameters.
Published in:
Semiconductors, 2006, v. 40, n. 11, p. 1314, doi. 10.1134/S106378260611011X
By:
- Volodin, V. A.;
- Efremov, M. D.;
- Deryabin, A. S.;
- Sokolov, L. V.
Publication type:
Article
Electrical properties and photoluminescence of SiOx layers with Si nanocrystals in relation to the SiOx composition.
Published in:
Semiconductors, 2006, v. 40, n. 10, p. 1198, doi. 10.1134/S1063782606100137
By:
- Antonova, I.;
- Gulyaev, M.;
- Yanovitskaya, Z.;
- Volodin, V.;
- Marin, D.;
- Efremov, M.;
- Goldstein, Y.;
- Jedrzejewski, J.
Publication type:
Article
Modification of quantum dots in Ge/Si nanostructures by pulsed laser irradiation.
Published in:
Semiconductors, 2006, v. 40, n. 2, p. 202, doi. 10.1134/S1063782606020175
By:
- Volodin, V. A.;
- Yakimov, A. I.;
- Dvurechenskiĭ, A. V.;
- Efremov, M. D.;
- Nikiforov, A. I.;
- Gatskevich, E. I.;
- Ivlev, G. D.;
- Mikhalev, G. Yu.
Publication type:
Article
Effect of Quantum Confinement on Optical Properties of Ge Nanocrystals in GeO2 Films.
Published in:
Semiconductors, 2005, v. 39, n. 10, p. 1168, doi. 10.1134/1.2085265
By:
- Gorokhov, E. B.;
- Volodin, V. A.;
- Marin, D. V.;
- Orekhov, D. A.;
- Cherkov, A. G.;
- Gutakovskiı, A. K.;
- Shvets, V. A.;
- Borisov, A. G.;
- Efremov, M. D.
Publication type:
Article
Coulomb Blockade of the Conductivity of SiOx Films Due to One-Electron Charging of a Silicon Quantum Dot in a Chain of Electronic States.
Published in:
Semiconductors, 2005, v. 39, n. 8, p. 910, doi. 10.1134/1.2010684
By:
- Efremov, M. D.;
- Kamaev, G. N.;
- Volodin, V. A.;
- Arzhannikova, S. A.;
- Kachurin, G. A.;
- Cherkova, S. G.;
- Kretinin, A. V.;
- Malyutina-Bronskaya, V. V.;
- Marin, D. V.
Publication type:
Article

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