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- Title
Interactions of [sub μ]Al Acceptor Impurity in Weakly and Heavily Doped Silicon.
- Authors
Mamedov, T. N.; Andrianov, D. G.; Herlach, D.; Gorelkin, V. N.; Stoıkov, A. V.; Zimmermann, U.
- Abstract
The interactions of the aluminum acceptor impurity in silicon are investigated using polarized negative muons. The polarization of negative muons is studied as a function of temperature on crystalline silicon samples with phosphorus (1.6 × 10[sup 13]cm[sup –3]) and boron (4.1 × 10[sup 18]cm[sup –3]) impurities. The measurements are performed in a magnetic field of 4.1 kG perpendicular to the muon spin, in the temperature range from 4 to 300 K. The experimental results show that, in phosphorus-doped n-type silicon, an [sub μ]Al acceptor center is ionized in the temperature range T > 50 K. For boron-doped silicon, the temperature dependence of the shift of the muon spin precession frequency is found to deviate from the 1/T Curie law in the temperature range T ≤ 50 K. The interactions of a [sub μ]Al acceptor that may be responsible for the effects observed in the experiment are analyzed. © 2002 MAIK “Nauka / Interperiodica”.
- Subjects
SILICON; MUONS; ALUMINUM; CRYSTALS
- Publication
JETP Letters, 2002, Vol 76, Issue 7, p440
- ISSN
0021-3640
- Publication type
Article
- DOI
10.1134/1.1528698