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- Title
SIMPLIFYING HIGH-DENSITY MEMORY: EXPLOITING SELF-RECTIFYING RESISTIVE MEMORY WITH TiO<sub>2</sub>/HFO<sub>2</sub> BILAYER DEVICES.
- Authors
MIN GYOO CHO; JAE HEE GO; BYUNG JOON CHOI
- Abstract
Self-rectifying resistive memory can reduce the complexity of crossbar array architecture for high density memory. It can replace integrated memory and selector with one self-rectifying cell. Such a simple structure can be applied for the vertical resistive memory. Both top and bottom interface between insulating layer and electrodes are crucial to achieve highly self-rectifying memory cell. In this study, bilayer devices composed of HfO2 and TiO2 were fabricated using atomic layer deposition (ALD) for the implementation of self-rectifying memory cells. The physical, chemical, and electrical properties of HfO2/TiO2 and TiO2/HfO2 sandwiched between Pt and TiN electrodes were investigated. By analyzing the conduction mechanism of bilayer devices, the higher rectification ratio of TiO2/HfO2 stack was due to the difference in height and the number of energy barriers.
- Subjects
ATOMIC layer deposition; MEMORY; ACTIVATION energy
- Publication
Archives of Metallurgy & Materials, 2024, Vol 69, Issue 2, p463
- ISSN
1733-3490
- Publication type
Article
- DOI
10.24425/amm.2024.149767