We found a match
Your institution may have access to this item. Find your institution then sign in to continue.
- Title
Band-gap-graded Cu<sub>2</sub>ZnSn(S<sub>1-x</sub>,Se<sub>x</sub>)<sub>4</sub> Solar Cells Fabricated by an Ethanol-based, Particulate Precursor Ink Route.
- Authors
Kyoohee Woo; Youngwoo Kim; Wooseok Yang; Kyujin Kim; Inhyuk Kim; Yunjung Oh; Jin Young Kim; Jooho Moon
- Abstract
Solution processing of earth-abundant Cu2ZnSn(S1-x,Sex)4 (CZTSSe) absorber materials is an attractive research area in the economical and large-scale deployment of photovoltaics. Here, a band-gap-graded CZTSSe thin-film solar cell with 7.1% efficiency was developed using non-toxic solvent-based ink without the involvement of complex particle synthesis, highly toxic solvents, or organic additives. Despite the high series resistance due to the presence of a thick Mo(S,Se)x layer and Zn(S,Se) aggregates, a high short-circuit current density (JSC) was generated. In addition, there was no significant difference in open circuit voltages (VOC) between CZTS (0.517 V) and CZTSSe (0.505-0.479 V) cells, despite a significant band gap change from 1.51 eV to 1.24 eV. The high JSC and less loss of VOC are attributed to the effect of band gap grading induced by Se grading in the CZTSSe absorber layer. Our environmentally benign ink approach will enable the realization of low-cost, large-area, high-efficiency thin-film solar cells.
- Subjects
SOLAR cells; PHOTOVOLTAIC power generation; THIN films; OPEN-circuit voltage; BAND gaps
- Publication
Scientific Reports, 2013, p1
- ISSN
2045-2322
- Publication type
Article
- DOI
10.1038/srep03069