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- Title
An anisotropic van der Waals dielectric for symmetry engineering in functionalized heterointerfaces.
- Authors
Li, Zeya; Huang, Junwei; Zhou, Ling; Xu, Zian; Qin, Feng; Chen, Peng; Sun, Xiaojun; Liu, Gan; Sui, Chengqi; Qiu, Caiyu; Lu, Yangfan; Gou, Huiyang; Xi, Xiaoxiang; Ideue, Toshiya; Tang, Peizhe; Iwasa, Yoshihiro; Yuan, Hongtao
- Abstract
Van der Waals dielectrics are fundamental materials for condensed matter physics and advanced electronic applications. Most dielectrics host isotropic structures in crystalline or amorphous forms, and only a few studies have considered the role of anisotropic crystal symmetry in dielectrics as a delicate way to tune electronic properties of channel materials. Here, we demonstrate a layered anisotropic dielectric, SiP2, with non-symmorphic twofold-rotational C2 symmetry as a gate medium which can break the original threefold-rotational C3 symmetry of MoS2 to achieve unexpected linearly-polarized photoluminescence and anisotropic second harmonic generation at SiP2/MoS2 interfaces. In contrast to the isotropic behavior of pristine MoS2, a large conductance anisotropy with an anisotropy index up to 1000 can be achieved and modulated in SiP2-gated MoS2 transistors. Theoretical calculations reveal that the anisotropic moiré potential at such interfaces is responsible for the giant anisotropic conductance and optical response. Our results provide a strategy for generating exotic functionalities at dielectric/semiconductor interfaces via symmetry engineering. Here, the authors demonstrate that a layered anisotropic dielectric material, SiP2, can break the rotational symmetry of 2D MoS2, leading to linearly polarized photoluminescence emission and conductance anisotropy ratios up to 1000 in gated SiP2/MoS2 heterostructures.
- Subjects
VAN der Waals forces; CONDENSED matter physics; HETEROJUNCTIONS; CONDENSED matter; SEMICONDUCTOR junctions; SECOND harmonic generation
- Publication
Nature Communications, 2023, Vol 14, Issue 1, p1
- ISSN
2041-1723
- Publication type
Article
- DOI
10.1038/s41467-023-41295-6