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- Title
Optimum design of highly linear and efficient GaN HEMT Doherty amplifier considering the soft turn-on effects.
- Authors
Yong-Sub Lee; Mun-Woo Lee; Yoon-Ha Jeong
- Abstract
In this article, we propose the optimum design of a highly linear and efficient Doherty power amplifier (DPA) considering the soft turn-on effects of the GaN HEMT. To compensate for the soft turn-on characteristic and obtain an extended high-efficiency range, the DPA is designed with unequal drain biases. For experimental validations, the carrier and peaking cells are designed and implemented with the drain bias of 23 V and 33 V, respectively, using 25-W GaN HEMTs at 2.6 GHz and then tested using a continuous wave and a one-carrier WCDMA signal. The measured results show the superior performance for the proposed GaN HEMT DPA. © 2009 Wiley Periodicals, Inc. Microwave Opt Technol Lett 51: 956–959, 2009; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24210
- Subjects
POWER amplifiers; CONTINUOUS wave radar; WIRELESS communications; ELECTRONIC amplifiers; TELECOMMUNICATION systems
- Publication
Microwave & Optical Technology Letters, 2009, Vol 51, Issue 4, p956
- ISSN
0895-2477
- Publication type
Article
- DOI
10.1002/mop.24210