Found: 8
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Polarization-Engineered p-Type Electron-Blocking-Layer-Free III-Nitride Deep-Ultraviolet Light-Emitting Diodes for Enhanced Carrier Transport.
- Published in:
- Journal of Electronic Materials, 2022, v. 51, n. 2, p. 838, doi. 10.1007/s11664-021-09363-z
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- Article
Improving Color Quality of Nanowire White Light-Emitting Diodes with Mn 4+ Doped Fluoride Nanosheets.
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- Micromachines, 2021, v. 12, n. 8, p. 965, doi. 10.3390/mi12080965
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- Article
Improved Performance of Electron Blocking Layer Free AlGaN Deep Ultraviolet Light-Emitting Diodes Using Graded Staircase Barriers.
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- Micromachines, 2021, v. 12, n. 3, p. 334, doi. 10.3390/mi12030334
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- Article
A novel β‐Ga<sub>2</sub>O<sub>3</sub> HEMT with f<sub>T</sub> of 166 GHz and X‐band P<sub>OUT</sub> of 2.91 W/mm.
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- International Journal of Numerical Modelling, 2021, v. 34, n. 1, p. 1, doi. 10.1002/jnm.2794
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- Article
Epitaxial Growth and Characterization of AlInN-Based Core-Shell Nanowire Light Emitting Diodes Operating in the Ultraviolet Spectrum.
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- Scientific Reports, 2020, v. 10, n. 1, p. 1, doi. 10.1038/s41598-020-59442-0
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- Article
Enhancing Efficiency of AlGaN Ultraviolet‐B Light‐Emitting Diodes with Graded p‐AlGaN Hole Injection Layer.
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- Physica Status Solidi. A: Applications & Materials Science, 2021, v. 218, n. 15, p. 1, doi. 10.1002/pssa.202100003
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- Article
Single and double‐gate based AlGaN/GaN MOS‐HEMTs for the design of low‐noise amplifiers: a comparative study.
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- IET Circuits, Devices & Systems (Wiley-Blackwell), 2020, v. 14, n. 7, p. 1018, doi. 10.1049/iet-cds.2020.0015
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- Article
Full-Color InGaN/AlGaN Nanowire Micro Light-Emitting Diodes Grown by Molecular Beam Epitaxy: A Promising Candidate for Next Generation Micro Displays.
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- Micromachines, 2019, v. 10, n. 8, p. 492, doi. 10.3390/mi10080492
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- Article