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- Title
Progress of Gate‐Defined Semiconductor Spin Qubit: Host Materials and Device Geometries.
- Authors
Liu, Yang; Guan, Shan; Luo, Jun‐Wei; Li, Shu‐Shen
- Abstract
Quantum computing offers the potential to revolutionize information processing by exploiting the principles of quantum mechanics. Among the diverse quantum bit (qubit) technologies, silicon‐based semiconductor spin qubits have emerged as a promising contender due to their potential scalability and compatibility with existing semiconductor technologies. In this paper, the latest developments of spin qubits in gate‐defined semiconducting nanostructures made of silicon and germanium, starting from the basic properties of electron and hole states in group‐IV semiconductors, are reviewed. Specifically, various nanostructures that exploit their unique microscopic properties for qubit implementations, elaborating on the advances and challenges in experiments, are discussed. Strategies for enhancing qubit performance, such as designing new nanostructures and identifying suitable operating points, particularly those involving the valleys of electron qubits and the heavy‐hole–light‐hole mixing of hole qubits, are also highlighted. This comprehensive review thus provides valuable insights into the current state‐of‐the‐art in semiconductor quantum computing and suggests avenues for future research.
- Subjects
QUBITS; QUANTUM computing; QUANTUM mechanics; SEMICONDUCTORS; SEMICONDUCTOR technology; NARROW gap semiconductors
- Publication
Advanced Functional Materials, 2024, Vol 34, Issue 19, p1
- ISSN
1616-301X
- Publication type
Article
- DOI
10.1002/adfm.202304725