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- Title
X‐band quasi class‐F HPA MMIC using DynaFET GaN HEMT modelling.
- Authors
Jeong, Junhyung; Cho, Kyujun; Ji, Honggu; Chang, Woojin; Lee, Jongmin; Min, Byoung‐gue; Kang, Dongmin
- Abstract
This paper proposes an X‐band quasi Class‐F high power amplifier (HPA) monolithic microwave integrated circuit (MMIC) using DynaFET gallium nitride (GaN) high electron mobility transistor (HEMT) modelling. To enhance efficiency, a novel quasi Class‐F output matching circuit is proposed. DynaFET modelling for GaN HEMT is utilized for accurate HPA MMIC design. The proposed quasi Class‐F HPA MMIC, fabricated using ETRI's 0.15 µm GaN process, achieves an output power of 43.5∼44.5 dBm with a power‐added efficiency of 36∼40.7% within the 9.1∼10.3 GHz frequency bandwidth.
- Subjects
MONOLITHIC microwave integrated circuits; MODULATION-doped field-effect transistors; GALLIUM nitride; POWER amplifiers
- Publication
Electronics Letters (Wiley-Blackwell), 2024, Vol 60, Issue 10, p1
- ISSN
0013-5194
- Publication type
Article
- DOI
10.1049/ell2.13221