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- Title
Two-Dimensional Analytical Threshold Voltage Modelling of Pseudomorphic Si<sub>0:8</sub>Ge<sub>0:2</sub> p-Channel MOSFETs.
- Authors
Ansaripour, G.
- Abstract
In this work we present an analytical model of the threshold voltage of SiGe p-channel metal oxide semiconductor field effect transistor based on the solution of the two-dimensional Poisson's equation and the ground state wave function of Fang and Howard, and taking into account the space charge in the channel and its effect on the surface potential. It is seen that the experimental data are well fitted within the experimental error that shows the appropriateness of the implemented model. Also comparing the calculated results to that of the calculated from the available recent reported models indicates a reasonable improvement to them.
- Subjects
METAL oxide semiconductor field-effect transistors; POISSON'S equation; WAVE functions; HOT carriers; SPACE charge; SURFACE potential; MOLECULAR beam epitaxy; MATHEMATICAL models
- Publication
Acta Physica Polonica: A, 2011, Vol 120, Issue 6, p1043
- ISSN
0587-4246
- Publication type
Article
- DOI
10.12693/APhysPolA.120.1043