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- Title
Synthesies and properties of Tb-doped GaN nanowires.
- Authors
Cao, Y. P.; Shi, F.; Xiu, X. W.; Sun, H. B.; Guo, Y. F.; Liu, W. J.; Xue, C. S.
- Abstract
The synthesis of Tb-doped GaN nanowires on Si (111) substrates through ammoniating GaO films doped with Tb was investigated. X-ray photoelectron spectroscopy, X-ray diffraction, scanning electron microscope, high-resolution transmission electron microscopy and photoluminescence were used to characterize the composition, structure, morphology and optical properties of the products. The results show that the as-synthesized GaN nanowires doped with 3 at % Tb are of single-crystalline hexagonal wurtzite structure. The nanowires have diameters ranging from 30 to 50 nm and the lengths up to tens of micrometers. An f-f intra-atomic transition of rare earth at 545 nm corresponding to D- F of the Tb and other two peaks related with doping are observed in PL spectrum, confirming the doping of Tb into GaN. The growth mechanism of GaN nanowires was discussed briefly.
- Subjects
NANOWIRES; ELECTRIC wire; ELECTRON microscopes; SCANNING electron microscopes; ELECTRON microscopy
- Publication
Inorganic Materials, 2010, Vol 46, Issue 10, p1096
- ISSN
0020-1685
- Publication type
Article
- DOI
10.1134/S0020168510100122