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- Title
Scanning transmission X-ray microscopy probe for in situ mechanism study of graphene-oxide-based resistive random access memory.
- Authors
Hyun Woo Nho; Jong Yun Kim; Jian Wang; Hyun-Joon Shin; Sung-Yool Choi; Tae Hyun Yoon
- Abstract
Here, an in situ probe for scanning transmission X-ray microscopy (STXM) has been developed and applied to the study of the bipolar resistive switching (BRS) mechanism in an Al/graphene oxide (GO)/Al resistive random access memory (RRAM) device. To perform in situ STXM studies at the C K- and O K-edges, both the RRAM junctions and the I0 junction were fabricated on a single Si3N4 membrane to obtain local XANES spectra at these absorption edges with more delicate I0 normalization. Using this probe combined with the synchrotron-based STXM technique, it was possible to observe unique chemical changes involved in the BRS process of the Al/GO/Al RRAM device. Reversible oxidation and reduction of GO induced by the externally applied bias voltages were observed at the O K-edge XANES feature located at 538.2 eV, which strongly supported the oxygen ion drift model that was recently proposed from ex situ transmission electron microscope studies.
- Subjects
SCANNING transmission electron microscopy; RANDOM access memory; SYNCHROTRONS; MATHEMATICAL models; OXIDATION
- Publication
Journal of Synchrotron Radiation, 2014, Vol 21, Issue 1, p170
- ISSN
0909-0495
- Publication type
Article
- DOI
10.1107/S1600577513026696