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- Title
Luminescence and Structural Properties of High Stable Si- N-Doped BaMgAl<sub>10</sub> O<sub>17</sub>: Eu<sup>2+</sup> Phosphors Synthesized by a Mechanochemical Activation Route.
- Authors
Wang, Yi ‐ Fei; Zhu, Qiang ‐ Qiang; Hao, Lu ‐ Yuan; Xu, Xin; Xie, Rong ‐ Jun; Agathopoulos, Simeon; Srivastava, A.
- Abstract
Highly thermal stable Si- N-doped BAM ( BaMgAl10 O17: Eu2+) phosphors have been successfully synthesized by a mechanochemically assisted solid-state reaction method. Mechanical milling greatly improved the amount of Si- N pairs substituted for Al- O pairs in BAM lattice>. Si- N incorporation improves the photoluminescence ( PL) properties and the color purity, reduces the thermal quenching, and most importantly, increases the thermal stability of the BAM phosphors significantly. The interpretation of the positive influence of Si- N doping was attributed to the local structure of the produced phosphors, which was analyzed with the aid of first-principles density functional calculations. This analysis showed that the substitution of Al- O pairs with Si- N pairs should preferentially occur in the boundary between the spinel layer and the conduction layer of the BAM phosphor, leading to a compression of the conduction layer. Eu2+ ions prefer to substitute the N-coordinated Ba2+ ions in the lattice of Si- N-doped BAM phosphors, leading to a strong Eu- N bonding. The results of these calculations agree fairly well with the results recorded experimentally, specifically the electron paramagnetic resonance ( EPR) spectra, the X-ray absorption fine structure ( XAFS), thermoluminescence spectra ( TL), and decay behaviors.
- Subjects
LUMINESCENCE; MOLECULAR structure; DOPED semiconductors; CHEMICAL synthesis; PHOSPHORS; MECHANICAL chemistry; MECHANICAL alloying; PHOTOLUMINESCENCE
- Publication
Journal of the American Ceramic Society, 2013, Vol 96, Issue 8, p2562
- ISSN
0002-7820
- Publication type
Article
- DOI
10.1111/jace.12367