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- Title
Direct Solvothermal Synthesis of B/N-Doped Graphene.
- Authors
Jung, Sun‐Min; Lee, Eun Kwang; Choi, Min; Shin, Dongbin; Jeon, In‐Yup; Seo, Jeong‐Min; Jeong, Hu Young; Park, Noejung; Oh, Joon Hak; Baek, Jong‐Beom
- Abstract
Heteroatom-doping into graphitic networks has been utilized for opening the band gap of graphene. However, boron-doping into the graphitic framework is extremely limited, whereas nitrogen-doping is relatively feasible. Herein, boron/nitrogen co-doped graphene (BCN-graphene) is directly synthesized from the reaction of CCl4, BBr3, and N2 in the presence of potassium. The resultant BCN-graphene has boron and nitrogen contents of 2.38 and 2.66 atom %, respectively, and displays good dispersion stability in N-methyl-2-pyrrolidone, allowing for solution casting fabrication of a field-effect transistor. The device displays an on/off ratio of 10.7 with an optical band gap of 3.3 eV. Considering the scalability of the production method and the benefits of solution processability, BCN-graphene has high potential for many practical applications.
- Subjects
GRAPHENE; HETEROCHAIN polymers; BORON; POTASSIUM; PYRROLIDINONES; FIELD-effect transistors
- Publication
Angewandte Chemie International Edition, 2014, Vol 53, Issue 9, p2398
- ISSN
1433-7851
- Publication type
Article
- DOI
10.1002/anie.201310260