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- Title
Physics-based simulation study of high-performance gallium arsenide phosphide-indium gallium arsenide tunnel field-effect transistor.
- Authors
Raad, Bhagwan Ram; Sharma, Dheeraj; Nigam, Kaushal; Kondekar, Pravin
- Abstract
For the first time, this work presents a novel combination of gallium arsenide phosphide (GaAsP) and indium gallium arsenide (InGaAs) as drain/channel and source materials, respectively, of tunnel field-effect transistor (TFET) for high-performance ultra-low-power applications. With this combination, the ON-state current of the proposed device is improved ten times as compared with GaAs-Ge TFET; however, the ambipolar current remains equal to the OFF-state current. It also exhibits a very low threshold voltage (half in amount) as compared with GaAs-Ge TFET. Apart from these, GaAsP-InGaAs TFET shows huge reduction in the subthreshold slope for better switching operation.
- Subjects
GALLIUM aluminum arsenide; ALUMINUM arsenide; PHOSPHIDES; FIELD-effect transistors; PHOSPHORUS compounds
- Publication
Micro & Nano Letters (Wiley-Blackwell), 2016, Vol 11, Issue 7, p366
- ISSN
1750-0443
- Publication type
Article
- DOI
10.1049/mnl.2016.0050