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- Title
Device Feasibility of Ferroelectric Field‐Effect Transistors Using Al‐Doped HfO<sub>2</sub> Gate Insulator Deposited with H<sub>2</sub>O Oxygen Precursor during Atomic Layer Deposition Process.
- Authors
Kim, Jin-Ju; Yoon, So-Jung; Kim, Yeriaron; Moon, Seung-Eon; Yoon, Sung-Min
- Abstract
Metal–ferroelectric–metal (MFM) capacitors with Pt‐/Al‐doped HfO2 (Al:HfO2)/TiN structures are characterized to demonstrate the ferroelectricity of the Al:HfO2 thin films deposited by atomic layer deposition with H2O precursor at various annealing conditions. When the crystallization annealing temperature increases from 750 to 850 °C, the value of ferroelectric remnant polarization (2Pr) increases from 11.5 to 17.1 μC cm−2 for the postmetallization annealing (PMA) process, whereas it increases from 8.1 to 11.4 μC cm−2 for the postdeposition annealing (PDA) process. The variations in crystallinity of Al:HfO2 and interfacial properties between the electrodes are analyzed to explore the physical origins to initiate the differences in electrical properties of the MFM capacitors. Using the Al:HfO2 thin film prepared with PMA at 850 °C as a ferroelectric gate insulator, which exhibits a maximum value of 2Pr and polarization switching time as short as 1 μs, the ferroelectric field‐effect transistors (FeFETs) are fabricated with metal–ferroelectric–metal–insulator–semiconductor gate stack. The memory on/off ratios are secured to be 2.6 × 104 and 2.0 × 104 after a lapse of retention time of 105 s and after repeated program operations of 104 cycles, respectively.
- Subjects
ATOMIC layer deposition; FIELD-effect transistors; METAL oxide semiconductor field-effect transistors; INDIUM gallium zinc oxide; FERROELECTRIC thin films; FERROELECTRIC devices; THIN films; RF values (Chromatography)
- Publication
Physica Status Solidi. A: Applications & Materials Science, 2021, Vol 218, Issue 10, p1
- ISSN
1862-6300
- Publication type
Article
- DOI
10.1002/pssa.202100006