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- Title
Determination of the diffusion lengths of Ga adatoms using GaN stripe profiling.
- Authors
Rozhavskaya, M. M.; Lundin, W. V.; Troshkov, S. I.; Tsatsulnikov, A. F.; Dubrovskii, V. G.
- Abstract
We present a method for determining the diffusion lengths of Ga adatoms on GaN by combining profiling of the tops of GaN stripes obtained by selective area MOCVD and a diffusion growth model. We deduce very high values of the diffusion lengths on tops of <11-20>-oriented stripes at 1040 °C which range from 6 μm under nitrogen-rich to 24 μm under hydrogen-rich atmosphere in the reactor. The obtained results show in particular that Ga-catalyzed growth of GaN nanostructures and nanowires should not be limited by Ga influx and thus the exceptional growth rate is anticipated in such cases.
- Subjects
GALLIUM; ADATOMS; DIFFUSION; NANOSTRUCTURES; VAPOR phase epitaxial growth
- Publication
Physica Status Solidi. A: Applications & Materials Science, 2015, Vol 212, Issue 4, p851
- ISSN
1862-6300
- Publication type
Article
- DOI
10.1002/pssa.201431912