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- Title
Advantages of near-ultraviolet light-emitting diodes with polarization-matched InGaN/AlGaInN multi-quantum wells.
- Authors
Kuo, Yen-Kuang; Chen, Yu-Han; Chang, Jih-Yuan; Tsai, Miao-Chan
- Abstract
Advantages of near-ultraviolet light-emitting diodes with polarization-matched InGaN/AlGaInN multi-quantum wells (QWs) are investigated numerically. Simulation results show that, the polarization-matched structure possesses improved efficiency droop and higher output power under high current injection due to better overlap of electron-hole wavefunctions and slighter Auger recombination. The optical performance of the polarization-matched structure can benefit from the enhanced capability of carrier confinement with the employment of larger bandgap electron-blocking layer and wider QWs.
- Publication
Physica Status Solidi. A: Applications & Materials Science, 2012, Vol 209, Issue 10, p2078
- ISSN
1862-6300
- Publication type
Article
- DOI
10.1002/pssa.201228274