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- Title
Embedded GaN nanostripes on c-sapphire for DFB lasers with semipolar quantum wells.
- Authors
Leute, Robert A. R.; Heinz, Dominik; Wang, Junjun; Meisch, Tobias; Müller, Marcus; Schmidt, Gordon; Metzner, Sebastian; Veit, Peter; Bertram, Frank; Christen, Jürgen; Martens, Martin; Wernicke, Tim; Kneissl, Michael; Jenisch, Stefan; Strehle, Steffen; Rettig, Oliver; Thonke, Klaus; Scholz, Ferdinand
- Abstract
GaN based laser diodes with semipolar quantum wells are typically grown on free-standing pseudo-substrates of small size. We present an approach to create a distributed-feedback (DFB) laser with semipolar quantum wells (QWs) on c-oriented templates. The templates are based on 2-inch sapphire wafers, the method could easily be adapted to larger diameters which are available commercially. GaN nanostripes with triangular cross-section are grown by selective area epitaxy (SAE) and QWs are grown on their semipolar side facets. The nanostripes are completely embedded and can be sandwiched inside a waveguide. For optical pumping, open waveguide structures with only a bottom cladding are used. Using nanoimprint lithography, stripe masks with 250 nm periodicity were fabricated over the whole wafer area. The periodicity corresponds to a 3rd order DFB structure for a laser emitting in the blue wavelength regime. These samples were analyzed structurally by high-resolution transmission electron microscopy (HRTEM), and spatio-spectrally by cathodoluminescence (CL) inside a scanning transmission electron microscope (STEM). Samples with an undoped cap are pumped optically for stimulated emission. To prove the feasibility of realizing a 2nd order DFB structure with this approach, stripes with a 170 nm periodicity are fabricated by electron beam lithography and SAE.
- Subjects
OPTICAL properties of gallium nitride; QUANTUM wells; OPTICAL polarization; DISTRIBUTED feedback lasers; SELECTIVE area epitaxy
- Publication
Physica Status Solidi (B), 2016, Vol 253, Issue 1, p180
- ISSN
0370-1972
- Publication type
Article
- DOI
10.1002/pssb.201552277