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- Title
Study of graphene p-n junctions formed by the electrostatic modification of the SiO<sub>2</sub> substrate.
- Authors
Nanayakkara, Tharanga R.; Wijewardena, U. Kushan; Kriisa, Annika; Mani, Ramesh G.
- Abstract
We study the transport properties of mm-scale CVD graphene p-n junctions, which are formed in a single gated graphene field effect transistor configuration. Here, an electrical-stressing-voltage technique served to modify the electrostatic potential in the SiO2/Si substrate and create the p-n junction. We examine the transport characteristics about the Dirac points that are localized in the perturbed and unperturbed regions in the graphene channel and note the quantitative differences in the Hall effect between the perturbed and unperturbed regions. The results also show that the longitudinal resistance is highly sensitive to the external magnetic field when the Hall bar device operates as a p-n junction.
- Subjects
SCHWABISCH Hall (Germany); BIOCHEMICAL substrates; FIELD-effect transistors; GRAPHENE; HALL effect; ELECTRIC potential
- Publication
Scientific Reports, 2024, Vol 14, Issue 1, p1
- ISSN
2045-2322
- Publication type
Article
- DOI
10.1038/s41598-024-61683-2