We found a match
Your institution may have access to this item. Find your institution then sign in to continue.
- Title
Domain Wall Free Polar Structure Enhanced Photodegradation Activity in Nanoscale Ferroelectric Ba<sub>x</sub>Sr<sub>1‐</sub><sub>x</sub>TiO<sub>3</sub>.
- Authors
Wang, Yaqiong; Zhang, Man; Liu, Jianguo; Zhang, Haibin; Li, Feng; Tseng, Chiao‐Wei; Yang, Bin; Smith, Graham; Zhai, Jiwei; Zhang, Zhen; Dunn, Steve; Yan, Haixue
- Abstract
Ferroelectric materials exhibit anomalous behavior due to the presence of domains and domain walls which are related to the spontaneous polarization inherent in the crystal structure. Control of ferroelectric domains and domain walls has been used to enhance device performances in ultrasound, pyroelectric detectors, and photovoltaic systems with renewed interest in nanostructuring for energy applications. It is also known that ferroelectrics including domain walls can double photocatalytic rate and increase carrier lifetime from microsecond to millisecond. However, there remains a lack of understanding on the different contributions of the domain and domain walls to photocatalytic activities. Herein it is found, by comparing samples of nanostructured BaxSr1‐xTiO3 with and without a polar domain, that the material with polar domains has a faster reaction rate (k = 0.18 min−1) than the nonpolar one (k = 0.11 min−1). It is further revealed that the observed enhanced photoactivity of perovskite ferroelectric materials stems from the inherent polarization of the domain instead of domain walls. Here, the new understanding of the underlying physics of materials with a spontaneous dipole opens a door to enhance the performance of light induced energy harvesting systems.
- Subjects
DOMAIN walls (String models); ALKALINE earth metals; LEAD titanate; FERROELECTRIC materials; PYROELECTRIC detectors; ENERGY harvesting; PHOTODEGRADATION; DOMAIN walls (Ferromagnetism)
- Publication
Advanced Energy Materials, 2020, Vol 10, Issue 38, p1
- ISSN
1614-6832
- Publication type
Article
- DOI
10.1002/aenm.202001802