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- Title
CMOS Compatible Hydrogen Sensor Using Platinum Gate and ALD–Aluminum Oxide.
- Authors
Elshaer, Adham; Ecoffey, Serge; Jaouad, Abdelatif; Monfray, Stephane; Drouin, Dominique
- Abstract
In this study, a p-Si/ALD-Al2O3/Ti/Pt MOS (metal oxide semiconductor) device has been fabricated and used as a hydrogen sensor. The use of such a stack enables a reliable, industry-compatible CMOS fabrication process. ALD-Al2O3 has been chosen as it can be integrated into the back end of the line (BEOL) or in CMOS, post processing. The device response and recovery are demonstrated with good correlation between the capacitance variation and the hydrogen concentration. Detection down to 20 ppm at 140 °C was obtained and a response time of 56 s for 500 ppm was recorded.
- Subjects
HYDROGEN detectors; METAL oxide semiconductors; COMPLEMENTARY metal oxide semiconductors; PLATINUM
- Publication
Sensors (14248220), 2024, Vol 24, Issue 10, p3020
- ISSN
1424-8220
- Publication type
Article
- DOI
10.3390/s24103020