Back to matchesWe found a matchYour institution may have access to this item. Find your institution then sign in to continue.TitleFerroelectric tunnel junction for memory and logic design.AuthorsZ. H. Wang; W. S. Zhao; W. Kang; Bouchenak-Khelladi, A.; Y. Zhang; Klein, J.- O.; Ravelosona, D.; Chappert, C.AbstractThe article reports on the application of the emerging nonvolatile binary data storage device, ferroelectric tunnel junction (FTJ), which is switched through pure electronic mechanism.SubjectsFERROELECTRIC devices; TUNNEL junction devicesPublicationEurophysics News, 2014, Vol 45, Issue 2, p15ISSN0531-7479Publication typeArticle