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- Title
INVESTIGATION OF FOCUSED ION BEAM IMPLANTATION PROFILE OF Ga<sup>+</sup> IONS FOR APPLICATIONS IN SILICON PHOTONICS.
- Authors
AY, Feridun
- Abstract
Use of focused ion beam (FIB) as a nanostructuring platform for fast prototype device development in the area of photonics has been attracting a considerable interest. In this study, we report a systematic investigation of focused ion beam (FIB) induced Ga+ ion implantation in silicon on insulator (SOI) structures. The local implantation of Ga+ ions during milling is studied for a wide range of ion doses, ranging from about 1014 to 1017 ions/cm2, using X-ray photoelectron spectroscopy (XPS). Ion implantation is realized on identically sized areas for each dose by varying the FIB parameters such as dwell time and loop number. It is found that the most of the Ga+ is within the first 50 nm of Si. This suggests that it can be possible to potentially reduce optical losses caused by the ion implantation in any optical application. Methods such as thermal annealing and wet or dry chemical etching can result in removal of the 50 nm implanted layer of SOI, as a result removing the layer causing potentially high optical losses.
- Subjects
FOCUSED ion beams; X-ray photoelectron spectroscopy; ION implantation; PARTICLE beam focusing; PHOTONICS
- Publication
Eskişehir Technical University Journal of Science & Technology A - Applied Sciences & Engineering, 2018, Vol 19, Issue 4, p976
- ISSN
2667-4211
- Publication type
Article
- DOI
10.18038/aubtda.471568