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- Title
Terahertz Generation in InAs Epitaxial Films.
- Authors
Trukhin, V. N.; Solov'ev, V. A.; Mustafin, I. A.; Chernov, M. Yu.
- Abstract
We present the results of terahertz generation studies under excitation via femtosecond lasers pulses epitaxial films of InAs, which were synthesized on semi-insulating and highly doped GaAs substrates. It is shown that a terahertz emitter based on epitaxial InAs film grown on a heavily doped GaAs n-type substrate, has the same terahertz generation efficiency as the InAs-film emitter grown on a semi-isolating GaAs substrate, but it has a significantly better spectral resolution, which is mainly determined by the parameters of the optical delay line and the femtosecond laser's stability.
- Subjects
FEMTOSECOND pulses; DELAY lines; TERAHERTZ spectroscopy; MOLECULAR beam epitaxy; FEMTOSECOND lasers; AUDITING standards
- Publication
Technical Physics Letters, 2023, Vol 49, pS146
- ISSN
1063-7850
- Publication type
Article
- DOI
10.1134/S1063785023900595