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- Title
Stimulated Emission at 1.3-μm Wavelength in Metamorphic InGaAs/InGaAsP Structure with Quantum Wells Grown on Ge/Si(001) Substrate.
- Authors
Aleshkin, V. Ya.; Baidus, N. V.; Vikhrova, O. V.; Dubinov, A. A.; Zvonkov, B. N.; Krasilnik, Z. F.; Kudryavtsev, K. E.; Nekorkin, S. M.; Novikov, A. V.; Rykov, A. V.; Samartsev, I. V.; Yurasov, D. V.
- Abstract
A laser structure comprising metamorphic InGaAsP layer and InGaAs quantum wells on a non-inclined Si(001) substrate with relaxed Ge buffer layer has been grown for the first time by metal-organic vapor phase epitaxy (MOVPE). The optically pumped lasers exhibit stimulated emission at a wavelength of 1.3 μm. At liquid-nitrogen temperature, the threshold power density of pumping at 0.8 μm amounted to 250 kW/cm2.
- Subjects
WAVELENGTHS; INDIUM gallium arsenide; QUANTUM wells; STIMULATED emission; VAPOR phase epitaxial growth
- Publication
Technical Physics Letters, 2018, Vol 44, Issue 8, p735
- ISSN
1063-7850
- Publication type
Article
- DOI
10.1134/S1063785018080175