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- Title
Improving the electrical performance of PDI8-CN<sub>2</sub> bottom-gate coplanar organic thin-film transistors.
- Authors
Parlato, Loredana; Sarnelli, Ettore; Cassinese, Antonio; Chianese, Federico; Chiarella, Fabio; Nappi, Ciro; Barra, Mario
- Abstract
In this paper, we report on the fabrication of n-type bottom-gate bottom-contact transistors, based on evaporated films of a perylene diimide derivative (PDI8-CN2), displaying electrical performances comparable to their top-contact counterparts. By combining very thin (20 nm) electrodes and a cleaning process with oxygen plasma, indeed, bottom-contact devices with maximum mobility approaching 0.2 cm2/V s and a contact resistance lower than 35 kΩ cm at low VDS values have been achieved. AFM analyses reveal that the improved electrical responses are accompanied by the optimized PDI8-CN2 film morphology which, very significantly, exhibits similar features on the gold and dielectric (i.e., SiO2) surfaces.
- Subjects
THIN film transistors; ORGANIC thin films; PERYLENE derivatives; OXYGEN plasmas; DIELECTRICS
- Publication
Applied Physics A: Materials Science & Processing, 2018, Vol 124, Issue 10, p1
- ISSN
0947-8396
- Publication type
Article
- DOI
10.1007/s00339-018-2130-3