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- Title
Investigation of the interrelation between the chemical state and the electric properties in Al-doped ZnO films.
- Authors
Wang, Jinzhao; Ni, Dongfang; Zhang, Tianjin; Wang, Duofa; Liang, Kun
- Abstract
Transparent conducting Al-doped ZnO (AZO) thin films were prepared on glass substrates by radio frequency magnetron sputtering in pure Ar. The influence of the annealing atmosphere on the microstructure, chemical state, electric and optical properties of the AZO films was investigated with X-ray diffraction, field-emission scanning electron microscopy, X-ray photoelectron spectroscopy and Hall measurements. The AZO thin films annealed under vacuum had the highest carrier concentration of 2.488 × 10 cm and a Hall mobility of 16.35 cm V s, while the AZO thin films annealed in air had the lowest carrier concentration of 4.182 × 10 cm and a Hall mobility of 2.375 cm V s. The fitted narrow-scan O1 s spectra revealed that O1 s was composed of three components. The AZO thin films annealed under vacuum appeared to have a higher proportion of medium binding energy which correspond to O ions in the oxygen-deficient regions within the ZnO matrix, and have a lower proportion of high binding energy component which correspond to loosely bound chemisorbed oxygen. It believed that the oxygen vacancies and chemisorbed oxygen of the films played an important role in the electrical conductance. The carrier concentration increased with the formation of oxygen vacancies. The Hall mobility increased with desorption of the loosely bound oxygen.
- Subjects
ZINC oxide thin films; ELECTRIC properties of metallic films; ALUMINUM; DOPING agents (Chemistry); SUBSTRATES (Materials science); MAGNETRON sputtering; HALL mobility
- Publication
Applied Physics A: Materials Science & Processing, 2015, Vol 120, Issue 4, p1635
- ISSN
0947-8396
- Publication type
Article
- DOI
10.1007/s00339-015-9375-x