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- Title
Effect of H implantation on the optical properties of semi-insulating GaAs crystals in the IR spectral region.
- Authors
Klyui, N.; Lozinskii, V.; Liptuga, A.; Dikusha, V.; Oksanych, A.; Kogdas', M.; Perekhrest, A.; Pritchin, S.
- Abstract
The optical properties of semi-insulating GaAs crystals subjected to multienergy hydrogen-ion implantation and treatment in a high-frequency electromagnetic field are studied in the infrared spectral region. It is established that such combined treatment provides a means for substantially increasing the transmittance of GaAs crystals to values characteristic of crystals of high optical quality. On the basis of analysis of the infrared transmittance and reflectance data, Raman spectroscopy data, and atomic-force microscopy data on the surface morphology of the crystals, a physical model is proposed to interpret the effects experimentally observed in the crystals. The model takes into account the interaction of radiation defects with the initial structural defects in the crystals as well as the effect of compensation of defect centers by hydrogen during high-frequency treatment.
- Subjects
OPTICAL properties of gallium arsenide; HYDROGEN ions -- Scattering; ION implantation; RAMAN spectroscopy; ATOMIC force microscopy
- Publication
Semiconductors, 2017, Vol 51, Issue 3, p305
- ISSN
1063-7826
- Publication type
Article
- DOI
10.1134/S1063782617030113