We found a match
Your institution may have access to this item. Find your institution then sign in to continue.
- Title
Carbon doped GaN layers grown by Pseudo-Halide Vapour Phase Epitaxy.
- Authors
Siche, Dietmar; Zwierz, Radoslaw; Kachel, Krzysztof; Jankowski, Nadja; Nenstiel, Christian; Callsen, Gordon; Bickermann, Matthias; Hoffmann, Axel
- Abstract
Pseudo-Halide Vapour Phase Epitaxy (PHVPE) was utilized to grow thick carbon doped GaN layers to study their suitability as semi-insulating (SI) substrates. With in-situ waste gas analysis by FTIR spectroscopy, the carbon doping from the HCN precursor gas was indirectly controlled in a wide range up to 5 × 1019 cm-3. The grown layers were characterized by Scanning Electron Microscopy (SEM), Secondary Ion Mass Spectroscopy (SIMS), Photoluminescence (PL), Micro-Raman-Spectroscopy, Hall effect measurement, and High Resolution X-Ray Diffractometry (HRXRD). Similar to the impurity incorporation (O, Si, Mg and Zn), carbon distribution proved to be inhomogeneous, due to its increased incorporation on facets of so-called V-pits.
- Subjects
HYDROCYANIC acid; GALLIUM nitride; SCANNING electron microscopy; PHOTOLUMINESCENCE; RAMAN spectroscopy
- Publication
Crystal Research & Technology, 2017, Vol 52, Issue 8, pn/a
- ISSN
0232-1300
- Publication type
Article
- DOI
10.1002/crat.201600364