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- Title
Simulation of X-Ray Diffraction Spectra for AlN/GaN Multiple Quantum Well Structures on AlN(0001) with Interface Roughness and Variation of Vertical Layers Thickness.
- Authors
Liubchenko, O. I.; Kladko, V. P.
- Abstract
A detailed XRD analysis of AlN/GaN multiple quantum well (MQW) structures grown on AlN(0001) substrates is proposed. The effect of roughness on the 2θ-ω scans measured in Bragg diffraction for symmetrical reflections is investigated together with the effect of depth variation of the well and barrier thickness. As shown, the magnitude of depth variation of the well and barrier thickness results in an asymmetrical broadening of the satellite peaks of the 2θ-ω scans. Roughness causes their symmetrical expansion that allows separating the influence of both effects. Several reasons of asymmetrical broadening of satellite peaks are considered: variation of the thickness period, variation of the average lattice parameter inherent to the period, which depends on the thickness ratio of the layers in the period, and their combination. The efficiency of the described method is illustrated in detail by numerical simulations.
- Subjects
X-ray diffraction; QUANTUM wells; INTERFACIAL roughness; ENERGY-band theory of solids; ELECTROMAGNETIC waves
- Publication
Metallophysics & Advanced Technologies / Metallofizika i Novejsie Tehnologii, 2018, Vol 40, Issue 6, p759
- ISSN
1024-1809
- Publication type
Article
- DOI
10.15407/mfint.40.06.0759