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- Title
Monte Carlo calculation of the low-temperature mobility of two-dimensional electrons in a quantum well in a selectively doped GaAs-based heterostructure.
- Authors
Borzdov, V. M.; Mulyarchik, S. G.; Khomich, A. V.
- Abstract
The feasibility of Monte Carlo calculations of the mobility of two-dimensional electrons in a square quantum well in GaAs/AlGaAs heterostructures in a low electric field E = 100 V/m is demonstrated and results are presented for temperatures of 4.2 and 77 K. The dependence of the mobility on the width of the potential well and on the surface density of charge carriers is determined.
- Subjects
ELECTRON mobility; QUANTUM wells; MONTE Carlo method; GALLIUM arsenide
- Publication
Technical Physics Letters, 1997, Vol 23, Issue 12, p935
- ISSN
1063-7850
- Publication type
Article
- DOI
10.1134/1.1261938