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- Title
Effect of Electrode Material on the Crystallization of GeTe Grown by Atomic Layer Deposition for Phase Change Random Access Memory.
- Authors
Oh, Seung Ik; Im, In Hyuk; Yoo, Chanyoung; Ryu, Sung Yeon; Kim, Yong; Choi, Seok; Eom, Taeyong; Hwang, Cheol Seong; Choi, Byung Joon
- Abstract
The electrical switching behavior of the GeTe phase-changing material grown by atomic layer deposition is characterized for the phase change random access memory (PCRAM) application. Planar-type PCRAM devices are fabricated with a TiN or W bottom electrode (BE). The crystallization behavior is characterized by applying an electrical pulse train and analyzed by applying the Johnson–Mehl–Avrami kinetics model. The device with TiN BE shows a high Avrami coefficient (>4), meaning that continuous and multiple nucleations occur during crystallization (set switching). Meanwhile, the device with W BE shows a smaller Avrami coefficient (~3), representing retarded nucleation during the crystallization. In addition, larger voltage and power are necessary for crystallization in case of the device with W BE. It is believed that the thermal conductivity of the BE material affects the temperature distribution in the device, resulting in different crystallization kinetics and set switching behavior.
- Subjects
PHASE change memory; ATOMIC layer deposition; ELECTROCRYSTALLIZATION; CRYSTALLIZATION; CRYSTALLIZATION kinetics
- Publication
Micromachines, 2019, Vol 10, Issue 5, p281
- ISSN
2072-666X
- Publication type
Article
- DOI
10.3390/mi10050281