We found a match
Your institution may have access to this item. Find your institution then sign in to continue.
- Title
Effects of post metallization annealing on modulation in effective work function of platinum gate electrode in germanium metal-oxide-semiconductor devices.
- Authors
Chandra, S. V. Jagadeesh; Hong, Woong-Ki; Kim, Jin-Sung; Hong, Hyobong; Choi, Chel-Jong
- Abstract
The inherent contributions of Fermi level pinning in Ge metal-oxide-semiconductor devices with Pt/HfO2 gate stacks were investigated by examining the impact of thermal treatment in forming gas (FG) and oxygen environments on the effective metal work function ( Φm,eff) of the Pt gate electrode. The Φm,eff of the Pt gate electrode for as-deposited devices was extracted to be ~4.1 eV. However, the FG annealing process led to the increase in the Φm,eff of the Pt gate electrode up to ~4.5 eV, whereas no variation was noticed after oxygen annealing process. The interstitial hydrogen atoms with negative charge introduced by the FG annealing compensate positively charged dipoles associated with the Fermi level pinning of Ge. This could be responsible for the increased Φm,eff of the Pt gate electrode in FG-annealed devices. Copyright © 2012 John Wiley & Sons, Ltd.
- Publication
Surface & Interface Analysis: SIA, 2012, Vol 44, Issue 11/12, p1436
- ISSN
0142-2421
- Publication type
Article
- DOI
10.1002/sia.4969