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- Title
Raytheon Continues to Drive GaN Evolution Through Cutting Edge Innovation.
- Authors
Drubin, Cliff
- Abstract
The article reports on the continuous drive of defense contractor Raytheon Co. in leveraging Gallium Nitride (GaN) evolution through DARPA Microsystems Technology Office Wide Bandgap Semiconductor Program. Noted is the effort of Raytheon in maturing its GaN systematically to enable the game changing system performance for the U.S. Department of Defense. Also pointed out is the significance of GaN technology in extending the capability of warfighters.
- Subjects
ELECTRIC properties of gallium nitride; SEMICONDUCTOR materials -- Electric properties; WIDE gap semiconductors; RAYTHEON Co.; MILITARY science; UNITED States. Dept. of Defense
- Publication
Microwave Journal, 2014, Vol 57, Issue 4, p57
- ISSN
0192-6225
- Publication type
Article