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- Title
Growth of high-quality semiconducting tellurium films for high-performance p-channel field-effect transistors with wafer-scale uniformity.
- Authors
Kim, Taikyu; Choi, Cheol Hee; Byeon, Pilgyu; Lee, Miso; Song, Aeran; Chung, Kwun-Bum; Han, Seungwu; Chung, Sung-Yoon; Park, Kwon-Shik; Jeong, Jae Kyeong
- Abstract
Achieving high-performance p-type semiconductors has been considered one of the most challenging tasks for three-dimensional vertically integrated nanoelectronics. Although many candidates have been presented to date, the facile and scalable realization of high-mobility p-channel field-effect transistors (FETs) is still elusive. Here, we report a high-performance p-channel tellurium (Te) FET fabricated through physical vapor deposition at room temperature. A growth route involving Te deposition by sputtering, oxidation and subsequent reduction to an elemental Te film through alumina encapsulation allows the resulting p-channel FET to exhibit a high field-effect mobility of 30.9 cm2 V−1 s−1 and an ION/OFF ratio of 5.8 × 105 with 4-inch wafer-scale integrity on a SiO2/Si substrate. Complementary metal-oxide semiconductor (CMOS) inverters using In-Ga-Zn-O and 4-nm-thick Te channels show a remarkably high gain of ~75.2 and great noise margins at small supply voltage of 3 V. We believe that this low-cost and high-performance Te layer can pave the way for future CMOS technology enabling monolithic three-dimensional integration.
- Subjects
FIELD-effect transistors; SEMICONDUCTOR films; TELLURIUM; PHYSICAL vapor deposition; ALUMINUM oxide films; P-type semiconductors; SPUTTER deposition
- Publication
NPJ 2D Materials & Applications, 2022, Vol 6, Issue 1, p1
- ISSN
2397-7132
- Publication type
Article
- DOI
10.1038/s41699-021-00280-7