Structures similar to Schottky diodes are prepared by the thermal evaporation of chromium on high-resistivity cadmium telluride substrates doped by vanadium (CdTe : V) to a concentration of 5×10[SUP18]cm[SUP-3]. The current-voltage and spectral characteristics of the Cr/CdTe : V barrier structures are studied, and their rectifying properties are evaluated.