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Study of Active Regions Based on Multiperiod GaAsN/InAs Superlattice.
Published in:
Semiconductors, 2023, v. 57, n. 11, p. 474, doi. 10.1134/S106378262308002X
By:
- Babichev, A. V.;
- Pirogov, E. V.;
- Sobolev, M. S.;
- Denisov, D. V.;
- Fominykh, H. A.;
- Baranov, A. I.;
- Gudovskikh, A. S.;
- Melnichenko, I. A.;
- Yunin, P. A.;
- Nevedomsky, V. N.;
- Tokarev, M. V.;
- Ber, B. Ya.;
- Gladyshev, A. G.;
- Karachinsky, L. Ya.;
- Novikov, I. I.;
- Egorov, A. Yu.
Publication type:
Article
The Influence of the Waveguide Layer Composition on the Emission Parameters of 1550 nm InGaAs/InP Laser Heterostructures.
Published in:
Semiconductors, 2023, v. 57, n. 11, p. 492, doi. 10.1134/S1063782623080134
By:
- Novikov, I. I.;
- Nyapshaev, I. A.;
- Gladyshev, A. G.;
- Andryushkin, V. V.;
- Babichev, A. V.;
- Karachinsky, L. Yu.;
- Shernyakov, Yu. M.;
- Denisov, D. V.;
- Kryzhanovskaya, N. V.;
- Zhukov, A. E.;
- Egorov, A. Yu.
Publication type:
Article
Surface-Emitting Quantum-Cascade Lasers with a Grating Formed by Focused Ion Beam Milling.
Published in:
Semiconductors, 2023, v. 57, n. 10, p. 445, doi. 10.1134/S1063782623090038
By:
- Babichev, A. V.;
- Mikhailov, D. A.;
- Kolodeznyi, E. S.;
- Gladyshev, A. G.;
- Voznyuk, G. V.;
- Mitrofanov, M. I.;
- Denisov, D. V.;
- Slipchenko, S. O.;
- Lyutetskii, A. V.;
- Dudelev, V. V.;
- Evtikhiev, V. P.;
- Karachinsky, L. Ya.;
- Novikov, I. I.;
- Sokolovskii, G. S.;
- Pikhtin, N. A.;
- Egorov, A. Yu.
Publication type:
Article
Heterostructure of a 2.5 THz Range Quantum-Cascade Detector.
Published in:
Semiconductors, 2023, v. 57, n. 10, p. 440, doi. 10.1134/S1063782623050019
By:
- Babichev, A. V.;
- Kolodeznyi, E. S.;
- Gladyshev, A. G.;
- Denisov, D. V.;
- Jollivet, A.;
- Quach, P.;
- Karachinsky, L. Ya.;
- Nevedomsky, V. N.;
- Novikov, I. I.;
- Tchernycheva, M.;
- Julien, F. H.;
- Egorov, A. Yu.
Publication type:
Article
Study of the Spatial Characteristics of Emission of Surface-Emitting Ring Quantum-Cascade Lasers.
Published in:
Semiconductors, 2023, v. 57, n. 9, p. 377, doi. 10.1134/S1063782623070023
By:
- Babichev, A. V.;
- Mikhailov, D. A.;
- Chistyakov, D. V.;
- Kolodeznyi, E. S.;
- Gladyshev, A. G.;
- Voznyuk, G. V.;
- Mitrofanov, M. I.;
- Denisov, D. V.;
- Slipchenko, S. O.;
- Lyutetskii, A. V.;
- Dudelev, V. V.;
- Evtikhiev, V. P.;
- Karachinsky, L. Ya.;
- Novikov, I. I.;
- Pikhtin, N. A.;
- Egorov, A. Yu.;
- Sokolovskii, G. S.
Publication type:
Article
1550 nm Range High-Speed Single-Mode Vertical-Cavity Surface-Emitting Lasers.
Published in:
Semiconductors, 2023, v. 57, n. 4, p. 221, doi. 10.1134/S1063782623070072
By:
- Blokhin, S. A.;
- Babichev, A. V.;
- Karachinsky, L. Ya.;
- Novikov, I. I.;
- Blokhin, A. A.;
- Bobrov, M. A.;
- Kuzmenkov, A. G.;
- Maleev, N. A.;
- Andryushkin, V. V.;
- Bougrov, V. E.;
- Gladyshev, A. G.;
- Denisov, D. V.;
- Voropaev, K. O.;
- Zhumaeva, I. O.;
- Ustinov, V. M.;
- Li, H.;
- Tian, S. C.;
- Han, S. Y.;
- Sapunov, G. A.;
- Egorov, A. Yu.
Publication type:
Article
Investigation of Photoluminescence in the InGaAs/GaAs System with 1100-nm Range Quantum Dots.
Published in:
Semiconductors, 2023, v. 57, n. 2, p. 93, doi. 10.1134/S1063782623040012
By:
- Babichev, A. V.;
- Komarov, S. D.;
- Tkach, Yu. S.;
- Nevedomskiy, V. N.;
- Blokhin, S. A.;
- Kryzhanovskaya, N. V.;
- Gladyshev, A. G.;
- Karachinsky, L. Ya.;
- Novikov, I. I.
Publication type:
Article
Quantum-Cascade Laser with Radiation Emission through a Textured Layer.
Published in:
Semiconductors, 2022, v. 56, n. 1, p. 1, doi. 10.1134/S106378262201002X
By:
- Babichev, A. V.;
- Kolodeznyi, E. S.;
- Gladyshev, A.G.;
- Denisov, D. V.;
- Voznyuk, G. V.;
- Mitrofanov, M. I.;
- Mikhailov, D. A.;
- Chistyakov, D. V.;
- Kuritsyn, D. I.;
- Dudelev, V. V.;
- Slipchenko, S. O.;
- Lyutetskii, A. V.;
- Evtikhiev, V. P.;
- Karachinsky, L. Ya.;
- Novikov, I. I.;
- Morozov, S. V.;
- Sokolovskii, G. S.;
- Pikhtin, N. A.;
- Egorov, A. Yu.
Publication type:
Article
Surface Emitting Quantum-Cascade Ring Laser.
Published in:
Semiconductors, 2021, v. 55, n. 7, p. 591, doi. 10.1134/S106378262107006X
By:
- Babichev, A. V.;
- Kolodeznyi, E. S.;
- Gladyshev, A. G.;
- Denisov, D. V.;
- Voznyuk, G. V.;
- Mitrofanov, M. I.;
- Kharin, N. Yu.;
- Panevin, V. Yu.;
- Slipchenko, S. O.;
- Lyutetskii, A. V.;
- Evtikhiev, V. P.;
- Karachinsky, L. Ya.;
- Novikov, I. I.;
- Pikhtin, N. A.;
- Egorov, A. Yu.
Publication type:
Article
Quantum-Cascade Ring Resonator Laser with 7–8 μm Wavelength and Surface Radiation Output.
Published in:
Semiconductors, 2020, v. 54, n. 14, p. 1816, doi. 10.1134/S106378262014002X
By:
- Babichev, A. V.;
- Kolodeznyi, E. S.;
- Gladyshev, A. G.;
- Denisov, D. V.;
- Voznyuk, G. V.;
- Kuritsyn, D. I.;
- Mitrofanov, M. I.;
- Slipchenko, S. O.;
- Lyutetskii, A. V.;
- Evtikhiev, V. P.;
- Karachinsky, L. Ya.;
- Novikov, I. I.;
- Pikhtin, N. A.;
- Morozov, S. V.;
- Egorov, A. Y.
Publication type:
Article
1.55-μm-Range Vertical-Cavity Surface-Emitting Lasers, Manufactured by Wafer Fusion of Heterostructures Grown by Solid-Source Molecular-Beam Epitaxy.
Published in:
Semiconductors, 2020, v. 54, n. 10, p. 1276, doi. 10.1134/S1063782620100048
By:
- Blokhin, S. A.;
- Nevedomsky, S. N.;
- Bobrov, M. A.;
- Maleev, N. A.;
- Blokhin, A. A.;
- Kuzmenkov, A. G.;
- Vasyl'ev, A. P.;
- Rohas, S. S.;
- Babichev, A. V.;
- Gladyshev, A. G.;
- Novikov, I. I.;
- Karachinsky, L. Ya.;
- Denisov, D. V.;
- Voropaev, K. O.;
- Ionov, A. S.;
- Egorov, A. Yu.;
- Ustinov, V. M.
Publication type:
Article
Influence of Output Optical Losses on the Dynamic Characteristics of 1.55-μm Wafer-Fused Vertical-Cavity Surface-Emitting Lasers.
Published in:
Semiconductors, 2019, v. 53, n. 8, p. 1104, doi. 10.1134/S1063782619080074
By:
- Blokhin, S. A.;
- Bobrov, M. A.;
- Blokhin, A. A.;
- Kuzmenkov, A. G.;
- Maleev, N. A.;
- Ustinov, V. M.;
- Kolodeznyi, E. S.;
- Rochas, S. S.;
- Babichev, A. V.;
- Novikov, I. I.;
- Gladyshev, A. G.;
- Karachinsky, L. Ya.;
- Denisov, D. V.;
- Voropaev, K. O.;
- Ionov, A. S.;
- Egorov, A. Yu.
Publication type:
Article
Spontaneous Emission and Lasing of a Two-Wavelength Quantum-Cascade Laser.
Published in:
Semiconductors, 2019, v. 53, n. 3, p. 345, doi. 10.1134/S1063782619030023
By:
- Babichev, A. V.;
- Gladyshev, A. G.;
- Kurochkin, A. S.;
- Kolodeznyi, E. S.;
- Nevedomskii, V. N.;
- Karachinsky, L. Ya.;
- Novikov, I. I.;
- Sofronov, A. N.;
- Egorov, A. Yu.
Publication type:
Article
On the Impact of Barrier-Layer Doping on the Photoluminescence Efficiency of InGaAlAs/InGaAs/InP Strained-Layer Heterostructures.
Published in:
Semiconductors, 2018, v. 52, n. 9, p. 1156, doi. 10.1134/S1063782618090075
By:
- Kolodeznyi, E. S.;
- Kurochkin, A. S.;
- Rochas, S. S.;
- Babichev, A. V.;
- Novikov, I. I.;
- Gladyshev, A. G.;
- Karachinsky, L. Ya.;
- Savelyev, A. V.;
- Egorov, A. Yu.;
- Denisov, D. V.
Publication type:
Article
Room Temperature Lasing of Multi-Stage Quantum-Cascade Lasers at 8 μm Wavelength.
Published in:
Semiconductors, 2018, v. 52, n. 8, p. 1082, doi. 10.1134/S1063782618080031
By:
- Babichev, A. V.;
- Gladyshev, A. G.;
- Kurochkin, A. S.;
- Kolodeznyi, E. S.;
- Sokolovskii, G. S.;
- Bougrov, V. E.;
- Karachinsky, L. Ya.;
- Novikov, I. I.;
- Bousseksou, A. G.;
- Egorov, A. Yu.
Publication type:
Article
Heterostructures of Single-Wavelength and Dual-Wavelength Quantum-Cascade Lasers.
Published in:
Semiconductors, 2018, v. 52, n. 6, p. 745, doi. 10.1134/S1063782618060039
By:
- Babichev, A. V.;
- Kurochkin, A. S.;
- Kolodeznyi, E. C.;
- Filimonov, A. V.;
- Usikova, A. A.;
- Nevedomsky, V. N.;
- Gladyshev, A. G.;
- Karachinsky, L. Ya.;
- Novikov, I. I.;
- Egorov, A. Yu.
Publication type:
Article
Emission-Line Width and α-Factor of 850-nm Single-Mode Vertical-Cavity Surface-Emitting Lasers Based on InGaAs/AlGaAs Quantum Wells.
Published in:
Semiconductors, 2018, v. 52, n. 1, p. 93, doi. 10.1134/S1063782618010062
By:
- Blokhin, S.;
- Bobrov, M.;
- Blokhin, A.;
- Kuzmenkov, A.;
- Vasil'ev, A.;
- Zadiranov, Yu.;
- Evropeytsev, E.;
- Sakharov, A.;
- Ledentsov, N.;
- Karachinsky, L.;
- Ospennikov, A.;
- Maleev, N.;
- Ustinov, V.
Publication type:
Article
Optical properties of metamorphic hybrid heterostuctures for vertical-cavity surface-emitting lasers operating in the 1300-nm spectral range.
Published in:
Semiconductors, 2017, v. 51, n. 9, p. 1127, doi. 10.1134/S1063782617090056
By:
- Babichev, A.;
- Kryzhanovskaya, N.;
- Moiseev, E.;
- Gladyshev, A.;
- Karachinsky, L.;
- Novikov, I.;
- Blokhin, S.;
- Bobrov, M.;
- Zadiranov, Yu.;
- Troshkov, S.;
- Egorov, A.
Publication type:
Article
Room-temperature operation of quantum cascade lasers at a wavelength of 5.8 μm.
Published in:
Semiconductors, 2016, v. 50, n. 10, p. 1299, doi. 10.1134/S1063782616100067
By:
- Babichev, A.;
- Bousseksou, A.;
- Pikhtin, N.;
- Tarasov, I.;
- Nikitina, E.;
- Sofronov, A.;
- Firsov, D.;
- Vorobjev, L.;
- Novikov, I.;
- Karachinsky, L.;
- Egorov, A.
Publication type:
Article
On the gain properties of 'thin' elastically strained InGaAs/InGaAlAs quantum wells emitting in the near-infrared spectral region near 1550 nm.
Published in:
Semiconductors, 2016, v. 50, n. 10, p. 1412, doi. 10.1134/S1063782616100201
By:
- Novikov, I.;
- Karachinsky, L.;
- Kolodeznyi, E.;
- Bougrov, V.;
- Kurochkin, A.;
- Gladyshev, A.;
- Babichev, A.;
- Gadzhiev, I.;
- Buyalo, M.;
- Zadiranov, Yu.;
- Usikova, A.;
- Shernyakov, Yu.;
- Savelyev, A.;
- Nyapshaev, I.;
- Egorov, A.
Publication type:
Article
Optical properties of InGaAs/InGaAlAs quantum wells for the 1520-1580 nm spectral range.
Published in:
Semiconductors, 2016, v. 50, n. 9, p. 1186, doi. 10.1134/S1063782616090098
By:
- Gladyshev, A.;
- Novikov, I.;
- Karachinsky, L.;
- Denisov, D.;
- Blokhin, S.;
- Blokhin, A.;
- Nadtochiy, A.;
- Kurochkin, A.;
- Egorov, A.
Publication type:
Article
Optical properties of metamorphic GaAs/InAlGaAs/InGaAs heterostructures with InAs/InGaAs quantum wells, emitting light in the 1250-1400-nm spectral range.
Published in:
Semiconductors, 2016, v. 50, n. 5, p. 612, doi. 10.1134/S1063782616050079
By:
- Egorov, A.;
- Karachinsky, L.;
- Novikov, I.;
- Babichev, A.;
- Nevedomskiy, V.;
- Bugrov, V.
Publication type:
Article
Design concepts of monolithic metamorphic vertical-cavity surface-emitting lasers for the 1300-1550 nm spectral range.
Published in:
Semiconductors, 2015, v. 49, n. 11, p. 1522, doi. 10.1134/S1063782615110068
By:
- Egorov, A.;
- Karachinsky, L.;
- Novikov, I.;
- Babichev, A.;
- Nevedomskiy, V.;
- Bugrov, V.
Publication type:
Article
Lasing of multiperiod quantum-cascade lasers in the spectral range of (5.6-5.8)-μm under current pumping.
Published in:
Semiconductors, 2015, v. 49, n. 11, p. 1527, doi. 10.1134/S106378261511007X
By:
- Egorov, A.;
- Babichev, A.;
- Karachinsky, L.;
- Novikov, I.;
- Nikitina, E.;
- Tchernycheva, M.;
- Sofronov, A.;
- Firsov, D.;
- Vorobjev, L.;
- Pikhtin, N.;
- Tarasov, I.
Publication type:
Article
Metamorphic distributed Bragg reflectors for the 1440-1600 nm spectral range: Epitaxy, formation, and regrowth of mesa structures.
Published in:
Semiconductors, 2015, v. 49, n. 10, p. 1388, doi. 10.1134/S1063782615100073
By:
- Egorov, A.;
- Karachinsky, L.;
- Novikov, I.;
- Babichev, A.;
- Berezovskaya, T.;
- Nevedomskiy, V.
Publication type:
Article
Degradation-robust 850-nm vertical-cavity surface-emitting lasers for 25Gb/s optical data transmission.
Published in:
Semiconductors, 2014, v. 48, n. 1, p. 77, doi. 10.1134/S1063782614010072
By:
- Blokhin, S.;
- Karachinsky, L.;
- Novikov, I.;
- Payusov, A.;
- Nadtochiy, A.;
- Bobrov, M.;
- Kuzmenkov, A.;
- Maleev, N.;
- Ledentsov, N.;
- Ustinov, V.;
- Bimberg, D.
Publication type:
Article
Efficient electro-optic semiconductor medium based on type-II heterostructures.
Published in:
Semiconductors, 2013, v. 47, n. 11, p. 1528, doi. 10.1134/S1063782613110201
By:
- Shchukin, V.;
- Ledentsov, N.;
- Karachinsky, L.;
- Blokhin, S.;
- Novikov, I.;
- Bogoslovskiy, N.;
- Savelyev, A.
Publication type:
Article
Influence of optical losses on the dynamic characteristics of linear arrays of near-infrared vertical-cavity surface-emitting lasers.
Published in:
Semiconductors, 2013, v. 47, n. 6, p. 844, doi. 10.1134/S1063782613060055
By:
- Blokhin, S.;
- Bobrov, M.;
- Maleev, N.;
- Kuzmenkov, A.;
- Stetsenko, V.;
- Pavlov, M.;
- Karachinsky, L.;
- Novikov, I.;
- Zadiranov, Yu.;
- Egorov, A.;
- Ustinov, V.
Publication type:
Article
Optical anisotropy of InGaAs quantum dots.
Published in:
Semiconductors, 2013, v. 47, n. 1, p. 85, doi. 10.1134/S1063782613010077
By:
- Blokhin, S.;
- Nadtochiy, A.;
- Krasivichev, A.;
- Karachinsky, L.;
- Vasil'ev, A.;
- Nevedomskiy, V.;
- Maximov, M.;
- Cirlin, G.;
- Buravlev, A.;
- Maleev, N.;
- Zhukov, A.;
- Ledentsov, N.;
- Ustinov, V.
Publication type:
Article
Quantum dot semiconductor lasers of the 1.3 μm wavelength range with high temperature stability of the lasing wavelength (0.2 nm/K).
Published in:
Semiconductors, 2009, v. 43, n. 5, p. 680, doi. 10.1134/S1063782609050261
By:
- Karachinsky, L. Ya.;
- Novikov, I. I.;
- Shernyakov, Yu. M.;
- Gordeev, N. Yu.;
- Payusov, A. S.;
- Maximov, M. V.;
- Mikhrin, S. S.;
- Lifshits, M. B.;
- Shchukin, V. A.;
- Kop'ev, P. S.;
- Ledentsov, N. N.;
- Bimberg, D.
Publication type:
Article
Generation of superradiation in quantum dot nanoheterostructures.
Published in:
Semiconductors, 2008, v. 42, n. 6, p. 714, doi. 10.1134/S1063782608060134
By:
- Savelyev, A. V.;
- Karachinsky, L. Ya.;
- Novikov, I. I.;
- Gordeev, N. Yu.;
- Seisyan, R. P.;
- Zegrya, G. G.
Publication type:
Article
The role of transport processes of nonequilibrium charge carriers in radiative properties of arrays of InAs/GaAs quantum dots.
Published in:
Semiconductors, 2008, v. 42, n. 3, p. 291, doi. 10.1134/S1063782608030093
By:
- Shkolnik, A. S.;
- Savelyev, A. V.;
- Karachinsky, L. Ya.;
- Gordeev, N. Yu.;
- Seisyan, R. P.;
- Zegrya, G. G.;
- Pellegrini, S.;
- Buller, G. S.;
- Evtikhiev, V. P.
Publication type:
Article
Continuous-wave Lasing of Single-Mode Metamorphic Quantum Dot Lasers for the 1.5-μm Spectral Region.
Published in:
Semiconductors, 2005, v. 39, n. 12, p. 1415, doi. 10.1134/1.2140316
By:
- Karachinsky, L. Ya.;
- Kettler, T.;
- Gordeev, N. Yu.;
- Novikov, I. I.;
- Maximov, M. V.;
- Shernyakov, Yu. M.;
- Kryzhanovskaya, N. V.;
- Zhukov, A. E.;
- Semenova, E. S.;
- Vasil'ev, A. P.;
- Ustinov, V. M.;
- Ledentsov, N. N.;
- Kovsh, A. R.;
- Shchukin, V. A.;
- Mikhrin, S. S.;
- Lochmann, A.;
- Schulz, O.;
- Reissmann, L.;
- Bimberg, D.
Publication type:
Article
Mechanism of Dicke Superradiance in Semiconductor Heterostructures.
Published in:
Semiconductors, 2004, v. 38, n. 7, p. 837, doi. 10.1134/1.1777611
By:
- Karachinsky, L. Ya.;
- Novikov, I.I.;
- Gordeev, N. Yu.;
- Zegrya, G.G.
Publication type:
Article
Epitaxial Growth of Highly Stressed InGaAs/InAlAs Layers on InP Substrates by Molecular-Beam Epitaxy.
Published in:
Technical Physics, 2024, v. 69, n. 6, p. 1493, doi. 10.1134/S1063784224060021
By:
- Andryushkin, V. V.;
- Novikov, I. I.;
- Gladyshev, A. G.;
- Babichev, A. V.;
- Karachinsky, L. Ya.;
- Dudelev, V. V.;
- Sokolovskii, G. S.;
- Egorov, A. Yu.
Publication type:
Article
Investigation of the Characteristics of the InGaAs/InAlGaAs Superlattice for 1300 nm Range Vertical-Cavity Surface-Emitting Lasers.
Published in:
Technical Physics, 2023, v. 68, n. 12, p. 549, doi. 10.1134/S1063784223080078
By:
- Blokhin, S. A.;
- Babichev, A. V.;
- Gladyshev, A. G.;
- Karachinsky, L. Ya.;
- Novikov, I. I.;
- Blokhin, A. A.;
- Bobrov, M. A.;
- Maleev, N. A.;
- Kuzmenkov, A. G.;
- Nadtochiy, A. M.;
- Nevedomskiy, V. N.;
- Andryushkin, V. V.;
- Rochas, S. S.;
- Denisov, D. V.;
- Voropaev, K. O.;
- Zhumaeva, I. O.;
- Ustinov, V. M.;
- Egorov, A. Yu.;
- Bougrov, V. E.
Publication type:
Article
Studying the Optical and Structural Properties of Three-Dimensional InGaP(As) Islands Formed by Substitution of Elements of the Fifth Group.
Published in:
Technical Physics, 2020, v. 65, n. 12, p. 2047, doi. 10.1134/S1063784220120099
By:
- Gladyshev, A. G.;
- Babichev, A.V.;
- Andryushkin, V. V.;
- Denisov, D. V.;
- Nevedomskii, V. N.;
- Kolodeznyi, E. S.;
- Novikov, I. I.;
- Karachinsky, L. Ya.;
- Egorov, A. Yu.
Publication type:
Article
Spectral Dynamics of Quantum Cascade Lasers Generating Frequency Combs in the Long-Wavelength Infrared Range.
Published in:
Technical Physics, 2020, v. 65, n. 8, p. 1281, doi. 10.1134/S106378422008006X
By:
- Dudelev, V. V.;
- Mikhailov, D. A.;
- Babichev, A. V.;
- Losev, S. N.;
- Kognovitskaya, E. A.;
- Lyutetskii, A. V.;
- Slipchenko, S. O.;
- Pikhtin, N. A.;
- Gladyshev, A. G.;
- Denisov, D. V.;
- Novikov, I. I.;
- Karachinsky, L. Ya.;
- Kuchinskii, V. I.;
- Egorov, A. Yu.;
- Sokolovskii, G. S.
Publication type:
Article
Turn-on Dynamics of Quantum Cascade Lasers with a Wavelength of 8100 nm at Room Temperature.
Published in:
Technical Physics, 2018, v. 63, n. 11, p. 1656, doi. 10.1134/S1063784218110087
By:
- Dudelev, V. V.;
- Losev, S. N.;
- Myl’nikov, V. Yu.;
- Babichev, A. V.;
- Kognovitskaya, E. A.;
- Slipchenko, S. O.;
- Lyutetskii, A. V.;
- Pikhtin, N. A.;
- Gladyshev, A. G.;
- Karachinsky, L. Ya.;
- Novikov, I. I.;
- Egorov, A. Yu.;
- Kuchinskii, V. I.;
- Sokolovskii, G. S.
Publication type:
Article
Lasing in 9.6-μm Quantum Cascade Lasers.
Published in:
Technical Physics, 2018, v. 63, n. 10, p. 1511, doi. 10.1134/S1063784218100043
By:
- Babichev, A. V.;
- Gusev, G. A.;
- Sofronov, A. N.;
- Firsov, D. A.;
- Vorob’ev, L. E.;
- Usikova, A. A.;
- Zadiranov, Yu. M.;
- Il’inskaya, N. D.;
- Nevedomskii, V. N.;
- Dyudelev, V. V.;
- Sokolovskii, G. S.;
- Gladyshev, A. G.;
- Karachinsky, L. Ya.;
- Novikov, I. I.;
- Egorov, A. Yu.
Publication type:
Article
Waveguide InGaAsP/InP Photodetectors for Low-Power Autocorrelation Measurements at 1.55 μm.
Published in:
Semiconductors, 2002, v. 36, n. 6, p. 714, doi. 10.1134/1.1485677
By:
- Gordeev, N. Yu.;
- Karachinsky, L. Ya.;
- Novikov, I. I.;
- Lyutetsky, A. V.;
- Pikhtin, N. A.;
- Fetisova, N. V.;
- Tarasov, I. S.;
- Kop’ev, P. S.
Publication type:
Article
Superradiance in semiconductors.
Published in:
Semiconductors, 1999, v. 33, n. 12, p. 1309, doi. 10.1134/1.1187914
By:
- Zaıtsev, S. V.;
- Graham, L. A.;
- Huffaker, D. L.;
- Gordeev, N. Yu.;
- Kopchatov, V. I.;
- Karachinsky, L. Ya.;
- Novikov, I. I.;
- Kop’ev, P. S.
Publication type:
Article
Features of Single-Mode Emission in 7.5–8.0 μm Range Quantum-Cascade Lasers with a Short Cavity Length.
Published in:
Technical Physics Letters, 2023, v. 49, p. S248, doi. 10.1134/S106378502301008X
By:
- Babichev, A. V.;
- Kolodeznyi, E. S.;
- Gladyshev, A. G.;
- Denisov, D. V.;
- Kharin, N. Yu.;
- Petruk, A. D.;
- Panevin, V. Yu.;
- Slipchenko, S. O.;
- Lyutetskii, A. V.;
- Karachinsky, L. Ya.;
- Novikov, I. I.;
- Pikhtin, N. A.;
- Egorov, A. Yu.
Publication type:
Article
Impact of Transverse Optical Confinement on Performance of 1.55 μm Vertical-Cavity Surface-Emitting Lasers with a Buried Tunnel Junction.
Published in:
Technical Physics Letters, 2023, v. 49, p. S178, doi. 10.1134/S1063785023900674
By:
- Blokhin, S. A.;
- Bobrov, M. A.;
- Blokhin, A. A.;
- Maleev, N. A.;
- Kuzmenkov, A. G.;
- Vasyl'ev, A. P.;
- Rochas, S. S.;
- Babichev, A. V.;
- Novikov, I. I.;
- Karachinsky, L. Ya.;
- Gladyshev, A. G.;
- Denisov, D. V.;
- Voropaev, K. O.;
- Egorov, A. Yu.;
- Ustinov, V. M.
Publication type:
Article
Analysis of Internal Optical Loss of 1.3 μm Vertical-Cavity Surface-Emitting Laser Based on n++-InGaAs/p++-InGaAs/p++-InAlGaAs Tunnel Junction.
Published in:
Technical Physics Letters, 2023, v. 49, p. S173, doi. 10.1134/S1063785023900662
By:
- Blokhin, S. A.;
- Bobrov, M. A.;
- Blokhin, A. A.;
- Maleev, N. A.;
- Kuzmenkov, A. G.;
- Vasyl'ev, A. P.;
- Rochas, S. S.;
- Babichev, A. V.;
- Novikov, I. I.;
- Karachinsky, L. Ya.;
- Gladyshev, A. G.;
- Denisov, D. V.;
- Voropaev, K. O.;
- Egorov, A. Yu.;
- Ustinov, V. M.
Publication type:
Article
Investigation of the Noise Characteristics of Vertical-Cavity Surface-Emitting Laser with a Rhomboidal Oxide Current Aperture for Use in a Cs-Based Compact Atomic Magnetometer.
Published in:
Technical Physics Letters, 2023, v. 49, p. S184, doi. 10.1134/S1063785023900686
By:
- Bobrov, M. A.;
- Blokhin, S. A.;
- Maleev, N. A.;
- Kuzmenkov, A. G.;
- Blokhin, A. A.;
- Vasilyev, A. P.;
- Kulagina, M. M.;
- Pazgalev, A. S.;
- Novikov, I. I.;
- Karachinsky, L. Ya.;
- Ustinov, V. M.
Publication type:
Article
Heterostructures of Quantum-Cascade Lasers with Nonselective Overgrowth by Metalorganic Vapour Phase Epitaxy.
Published in:
Technical Physics Letters, 2023, v. 49, p. S155, doi. 10.1134/S1063785023900625
By:
- Babichev, A. V.;
- Gladyshev, A. G.;
- Denisov, D. V.;
- Dudelev, V. V.;
- Mikhailov, D. A.;
- Slipchenko, S. O.;
- Lyutetskii, A. V.;
- Karachinsky, L. Ya.;
- Novikov, I. I.;
- Andreev, A. Yu.;
- Yarotskaya, I. V.;
- Podgaetskii, K. A.;
- Marmalyuk, A. A.;
- Padalitsa, A. A.;
- Ladugin, M. A.;
- Pikhtin, N. A.;
- Sokolovskii, G. S.;
- Egorov, A. Yu.
Publication type:
Article
The Effect of a Saturable Absorber in Long-Wavelength Vertical-Cavity Surface-Emitting Lasers Fabricated by Wafer Fusion Technology.
Published in:
Technical Physics Letters, 2020, v. 46, n. 12, p. 1257, doi. 10.1134/S1063785020120172
By:
- Blokhin, S. A.;
- Bobrov, M. A.;
- Blokhin, A. A.;
- Vasil'ev, A. P.;
- Kuz'menkov, A. G.;
- Maleev, N. A.;
- Rochas, S. S.;
- Gladyshev, A. G.;
- Babichev, A. V.;
- Novikov, I. I.;
- Karachinsky, L. Ya.;
- Denisov, D. V.;
- Voropaev, K. O.;
- Ionov, A. S.;
- Egorov, A. Yu.;
- Ustinov, V. M.
Publication type:
Article
A Study of the Spatial-Emission Characteristics of Quantum-Cascade Lasers for the 8-μm Spectral Range.
Published in:
Technical Physics Letters, 2020, v. 46, n. 11, p. 1152, doi. 10.1134/S106378502011019X
By:
- Dudelev, V. V.;
- Mikhailov, D. A.;
- Myl'nikov, V. Yu.;
- Babichev, A. V.;
- Losev, S. N.;
- Kognovitskaya, E. A.;
- Gladyshev, A. G.;
- Karachinsky, L. Ya.;
- Novikov, I. I.;
- Denisov, D. V.;
- Slipchenko, S. O.;
- Lyutetskii, A. V.;
- Pikhtin, N. A.;
- Kuchinskii, V. I.;
- Egorov, A. Yu.;
- Sokolovskii, G. S.
Publication type:
Article
The Influence of the Parameters of a Short-Period InGaAs/InGaAlAs Superlattice on Photoluminescence Efficiency.
Published in:
Technical Physics Letters, 2020, v. 46, n. 11, p. 1128, doi. 10.1134/S1063785020110267
By:
- Rochas, S. S.;
- Novikov, I. I.;
- Gladyshev, A. G.;
- Kolodeznyi, E. S.;
- Babichev, A. V.;
- Andryushkin, V. V.;
- Nevedomskii, V. N.;
- Denisov, D. V.;
- Karachinsky, L. Ya.;
- Egorov, A. Yu.;
- Bougrov, V. E.
Publication type:
Article

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