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- Title
Charge-Carrier Transport in Nanometer-Sized Periodic Si/CaF[sub 2] Structures with Participation of Traps.
- Authors
Berashevich, Yu. A.; Danilyuk, A. L.; Kholod, A. N.; Borisenko, V. E.
- Abstract
A model is proposed for carrier transport in Si/CaF[sub 2] nanometer periodic structures with the participation of traps in insulators. Simulation of the current-voltage characteristics of such structures showed that trap participation enhances the total carrier transport by 2-3 orders of magnitude and causes nonmonotonicity of current-voltage characteristics. The carrier transport depends on the energy level corresponding to traps, the number of states in a trap at the carrier trajectory, its deviation from a rectilinear one, insulator thickness, and potential barrier height.
- Subjects
NANOSTRUCTURED materials; SILICON compounds; EXCESS electrons
- Publication
Semiconductors, 2001, Vol 35, Issue 1, p112
- ISSN
1063-7826
- Publication type
Article
- DOI
10.1134/1.1340300