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- Title
The Reliability Impact of Bi Doping on the HfO<sub>2</sub> Charge-Trapping Layer: A First-Principles Study.
- Authors
Ye, Fengyu; Zhu, Ying; Yuan, Jun-Hui; Wang, Jiafu
- Abstract
Hafnia has emerged as a promising material for charge-trapping memory. However, enhancing its trapping performance remains a significant research challenge. In this work, we investigate the influence of Bi impurities on the reliability of HfO2-based charge-trapping memory devices using first-principles calculations. By examining the impact of Bi impurities on the formation of oxygen vacancies (VO), we obtained the lowest-energy Bi-VO3 defect model. Through an exploration of the microstructure, electronic structure, and Bader charge distribution of the Bi-VO3 defect system, we compare its device performance with the Al-VO3 defect system. Our findings demonstrate that the Bi-VO3 defect system exhibits superior electronic retention ability compared to the Al-VO3 defect system. This suggests that introducing Bi impurities into HfO2 can enhance the reliability of memory devices and presents a promising dopant solution for improving memory performance.
- Subjects
ELECTRONIC structure; DOPING agents (Chemistry); HAFNIUM oxide
- Publication
Journal of Electronic Materials, 2024, Vol 53, Issue 7, p3756
- ISSN
0361-5235
- Publication type
Article
- DOI
10.1007/s11664-024-11066-0