We found a match
Your institution may have access to this item. Find your institution then sign in to continue.
- Title
Study of patterned GaAsSbN nanowires using sigmoidal model.
- Authors
Johnson, Sean; Pokharel, Rabin; Lowe, Michael; Kuchoor, Hirandeep; Nalamati, Surya; Davis, Klinton; Rathnayake, Hemali; Iyer, Shanthi
- Abstract
This study presents the first report on patterned nanowires (NWs) of dilute nitride GaAsSbN on p-Si (111) substrates by self-catalyzed plasma-assisted molecular beam epitaxy. Patterned NW array with GaAsSbN of Sb composition of 3% as a stem provided the best yield of vertical NWs. Large bandgap tuning of ~ 75 meV, as ascertained from 4 K photoluminescence (PL), over a pitch length variation of 200–1200 nm has been demonstrated. Pitch-dependent axial and radial growth rates show a logistic sigmoidal growth trend different from those commonly observed in other patterned non-nitride III–V NWs. The sigmoidal fitting provides further insight into the PL spectral shift arising from differences in Sb and N incorporation from pitch induced variation in secondary fluxes. Results indicate that sigmoidal fitting can be a potent tool for designing patterned NW arrays of optimal pitch length for dilute nitrides and other highly mismatched alloys and heterostructures.
- Subjects
NANOWIRES; GALLIUM compounds; MOLECULAR beam epitaxy; NITRIDES; PHOTOLUMINESCENCE
- Publication
Scientific Reports, 2021, Vol 11, Issue 1, p1
- ISSN
2045-2322
- Publication type
Article
- DOI
10.1038/s41598-021-83973-9