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- Title
Investigation into the Influence of a Buffer Layer of Nanoporous Silicon on the Atomic and Electronic Structure and Optical Properties of A<sup>III</sup>N/por-Si Heterostructures Grown by Plasma-Activated Molecular-Beam Epitaxy.
- Authors
Seredin, P. V.; Lenshin, A. S.; Zolotukhin, D. S.; Goloshchapov, D. L.; Mizerov, A. M.; Arsentyev, I. N.; Beltyukov, A. N.
- Abstract
The influence of using a buffer sublayer of nanoporous por-Si on the morphological, physical, and structural properties of nanocolumnar InxGa1 –xN structures fabricated by plasma-activated molecular-beam epitaxy on single-crystal Si(111) substrates is shown. Using a set of structural-spectroscopic analytical methods, the electronic structure of the grown heterostructures, morphology, and optical properties are investigated, and the interrelations between them are established. It is shown that the use of a por-Si sublayer makes it possible to attain a more uniform distribution of diameters of InxGa1 –xN nanocolumns and to increase the photoluminescence intensity of the latter.
- Subjects
MOLECULAR beam epitaxy; BUFFER layers; ATOMIC structure; OPTICAL properties; HETEROSTRUCTURES; EPITAXY
- Publication
Semiconductors, 2019, Vol 53, Issue 7, p993
- ISSN
1063-7826
- Publication type
Article
- DOI
10.1134/S1063782619070224