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- Title
On the Application of Strain-Compensating GaAsP Layers for the Growth of InGaAs/GaAs Quantum-Well Laser Heterostructures Emitting at Wavelengths above 1100 nm on Artificial Ge/Si Substrates.
- Authors
Baidus, N. V.; Aleshkin, V. Ya.; Dubinov, A. A.; Krasilnik, Z. F.; Kudryavtsev, K. E.; Nekorkin, S. M.; Novikov, A. V.; Rykov, A. V.; Reunov, D. G.; Shaleev, M. V.; Yunin, P. A.; Yurasov, D. V.
- Abstract
Abstract: Stressed InGaAs/GaAs quantum-well laser structures are grown by gas-phase epitaxy from organometallic compounds on GaAs substrates and artificial Ge/Si substrates based on Si(001) with an epitaxial metamorphic Ge layer. To suppress the relaxation of elastic stresses during the growth of InGaAs quantum wells with a high fraction of In, strain-compensating GaAsP layers are applied. The structural and radiative properties of the samples grown on substrates of various types are compared. Stimulated radiation at wavelengths up to 1.24 μm at 300 K is obtained for structures grown on GaAs substrates and at wavelengths up to 1.1 μm at 77 K, for structures grown on Ge/Si substrates.
- Subjects
GALLIUM arsenide transistors; HETEROSTRUCTURES; QUANTUM wells; WAVELENGTHS; SUBSTRATES (Materials science)
- Publication
Semiconductors, 2018, Vol 52, Issue 12, p1547
- ISSN
1063-7826
- Publication type
Article
- DOI
10.1134/S1063782618120060