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- Title
AN IMPROVED RULE-BASED DUMMY METAL FILL METHOD FOR 65 NM ASIC DESIGN.
- Authors
XIAOMING CHEN; LING XIN; JIANWEI ZHANG; SONGSONG LI
- Abstract
Chemical-mechanical polishing (CMP) is an essential process in deep-submicrometer LSI manufacturing to achieve Chip's planarization. It includes two processes: back-end-of-line (BEOL) and front-end-of-line (FEOL). This paper focuses on the problem of BEOL in 65 nm copper process. Although model-based dummy metal fill has become a tendency recently, the proposed improved rule-based dummy fill is appropriate still. A middle scale design is used for simulation. The metal density, oxide thickness, copper thickness, capacitance variation and variation of layout data size were investigated. The results show that improved rule-based dummy fill and model-based dummy fill have the same planarization, and proposed method has small capacitance variation. The GDS file size of the proposed rule-based fill is less than the model-based fill's.
- Subjects
LARGE scale integration of circuits; MICROMETERS; SIMULATION methods &; models; SYSTEMS design; ELECTRIC capacity; METALS; THICKNESS measurement
- Publication
Journal of Circuits, Systems & Computers, 2013, Vol 22, Issue 4, p1
- ISSN
0218-1266
- Publication type
Article
- DOI
10.1142/S0218126613500217