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- Title
Green electroluminescence from AlN:Tb thin film devices on glass.
- Authors
Adachi, Daisuke; Kitaike, Ryohei; Ota, Jun; Toyama, Toshihiko; Okamoto, Hiroaki
- Abstract
Electroluminescence (EL) properties of AlN:Tb thin film EL device (TFELD) prepared on a glass substrate by a rf-magnetron sputtering method have been studied. The AlN:Tb emission layer consists of hexagonal (110)-oriented poly-crystals of AlN with a high transparency in visible region. Four emission peaks originating from 5D4 → 7F j ( j = 6, 5, 4, 3) transitions of Tb3+ were found in both photoluminescence (PL) and EL spectra of the AlN:Tb thin film. The peak emission intensity of the 5D4 → 7F6 transitions is almost the same magnitude with that of the 5D4 → 7F5 transitions, being largely different from the intensity ratio of Tb3+in other host materials.
- Subjects
THIN film devices; ELECTROLUMINESCENCE; MAGNETRONS; PHOTOLUMINESCENCE; SPECTRUM analysis
- Publication
Journal of Materials Science: Materials in Electronics, 2007, Vol 18, p71
- ISSN
0957-4522
- Publication type
Article
- DOI
10.1007/s10854-007-9167-y