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- Title
Microstructure of ZnO/Cu/TaN/SiO<sub>2</sub>/Si multilayers prepared by sputter deposition.
- Authors
Wu, Wan-Yu; Ting, Jyh-Ming
- Abstract
The article focuses on the microstructure of ZnO/Cu/TaN/Silicon dioxide/Si multilayers prepared by sputter deposition. To prepare ZnO thin films the sputter deposition techniques provide the advantages of simplicity, high deposition rate, low substrate temperature, good surface flatness, transparency and dense layer formation. ZnO thin films were deposited using an rf sputter deposition technique. The target was a 3-inch ZnO with a purity of 99.9%. The deposition was performed using a base pressure of less than 5×10-5 torr, a working pressure of 5×10-3 torr, a target-to-substrate distance of 70 mm, an rf power of 200 W, a deposition time of 30 min, and various di-oxide/Ar ratios.
- Subjects
SPUTTERING (Physics); MICROSTRUCTURE; THIN films; PRESSURE; MORPHOLOGY; SOLID state electronics
- Publication
Journal of Materials Science Letters, 2003, Vol 22, Issue 22, p1603
- ISSN
0261-8028
- Publication type
Article
- DOI
10.1023/A:1026340625900