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- Title
Offset error reduction using gate-bulk-driven error correction amplifier for low-voltage sub-bandgap reference.
- Authors
Li Lu; Changzhi Li
- Abstract
Presented is a gain-boosted gate-bulk-driven error correction amplifier with reduced offset errors for low-voltage sub-bandgap reference designs. The method can be applied to sub-bandgap circuits with BJT diodes, subthreshold MOSFETs or Schottky barrier diodes. Detailed analysis and circuit implementation are presented. Low voltage operation has been verified over - 55 to 125 °C. Simulation and measurement results demonstrate the minimised offset error and improved supply sensitivity, which indicates the effectiveness of the proposed gain boosting mechanism.
- Subjects
DIODES; GAS tubes; METAL oxide semiconductor field-effect transistors; SCHOTTKY barrier; SEMICONDUCTOR-metal boundaries
- Publication
Electronics Letters (Wiley-Blackwell), 2013, Vol 49, Issue 11, p1
- ISSN
0013-5194
- Publication type
Article
- DOI
10.1049/el.2013.0765