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- Title
Atomic and electronic structure of the surface of porous silicon layers.
- Authors
Domashevskaya, E. P.; Terekhov, V. A.; Turishchev, S. Yu.; Khoviv, D. A.; Parinova, E.V.; Skryshevskii, V. A.; Garil'chenko, I. V.
- Abstract
Atomic and electronic structure of the surface layers of porous silicon was studied by the methods of the near fine structure spectroscopy at the edge of X-ray absorption and ultrasoft X-ray emission spectroscopy. The thickness of the oxide layer and the degree of distortion of silicon-oxygen tetrahedra in this layer were estimated. The thickness of the surface oxide layer on the amorphous layer covering the nanocrystals of porous silicon that was kept during one year is several times greater than the thickness of the natural oxide in the single crystal silicon wafers. Distortion of the silicon-oxygen tetrahedron, the basic structural units of the silicon oxide, is accompanied by elongation of Si-O bonds and an increase in the Si-O-Si bond angles.
- Subjects
SILICON; X-ray spectroscopy; TETRAHEDRA; NANOCRYSTALS; SILICON oxide
- Publication
Russian Journal of General Chemistry, 2010, Vol 80, Issue 6, p1128
- ISSN
1070-3632
- Publication type
Article
- DOI
10.1134/S1070363210060150